HAT2036R PDF даташит
Спецификация HAT2036R изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching». |
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Детали детали
Номер произв | HAT2036R |
Описание | Silicon N Channel Power MOS FET Power Switching |
Производители | Hitachi Semiconductor |
логотип |
5 Pages
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HAT2036R
Silicon N Channel Power MOS FET
Power Switching
Features
• Low on-resistance
RDS(on)=12mΩ typ
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• High speed switching
tf=60ns typ.
ADE-208-665B(Z)
Target specification 3rd. Edition
May 1998
Outline
SOP–8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
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HAT2036R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
30
±20
12
96
12
2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
30
—
—
1.5
—
—
12
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
—
—
—
—
—
—
Note: 1. Pulse test
Typ
—
—
—
—
12
20
20
1200
380
200
23
4.0
6.0
40
300
35
60
0.9
35
Max
—
±0.1
1
3.0
15
30
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10mA, VGS = 0
VGS = ±20V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10V, I D = 1mA
ID = 6A, VGS = 10V *1
ID = 6A, VGS = 4.5V *1
ID = 6A, VDS = 10V *1
VDS = 10V
VGS = 0
f = 1MHz
VDD = 10V
VGS = 10V
ID = 12A
VGS = 4.5V, ID = 6A
VDD ≈ 10V
IF = 12A, VGS = 0 *1
IF = 12A, VGS = 0
diF/ dt =20A/µs
2
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Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0 50 100 150
Ambient Temperature Ta (°C)
HAT2036R
3
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Номер в каталоге | Описание | Производители |
HAT2036R | Silicon N Channel Power MOS FET Power Switching | Hitachi Semiconductor |
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