(PDF) HAT2037T Datasheet - Silicon N Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT2037T
Descripción	Silicon N Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT2037T Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline ADE-208-530 D (Z) 5th. Edition February 1999 TSSOP–8 158 DDD 87 6 5 123 4 4 G SSSS 2 36 7 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate 1 page HAT2037T Body–Drain Diode Reverse Recovery Time 500 200 100 50 20 10 di/dt = 20 A/µs 5 VGS = 0, Ta = 25°C 0.1 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 10000 3000 1000 300 100 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Coss Crss 30 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 50 I D = 5.5 A 40 10 8 30 VDS 20 V DD = 5 V 10 V 25 V 6 4 VGS 10 V DD = 25 V 2 10 V 5V 0 0 4 8 12 16 20 Gate Charge Qg (nc) 1000 500 Switching Characteristics VGS = 4 V, V DD = 10 V PW = 3 µs, duty < 1 % 200 t d(off) 100 t f 50 t r t d(on) 20 10 0.1 0.2 0.5 1 2 5 Drain Current I D (A) 10 5 5 Page

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PDF HAT2037T Data sheet ( Hoja de datos )