(PDF) HAT2038R Datasheet - Silicon N Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT2038R
Descripción	Silicon N Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching Features • For Automotive Application ( at Type Code “J “) • Low on-resistance • Capable of 4 V gate drive • High density mounting Outline ADE-208-666C (Z) 4th. Edition February 1999 SOP–8 78 DD 8 7 65 1 234 56 DD 24 GG S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain 1 page HAT2038R/HAT2038RJ Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Pulse Test 0.4 0.3 ID=5A 0.2 2A 0.1 1A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.5 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 0.12 1, 2 A ID=5A 0.08 V GS = 4 V 1, 2, 5 A 0.04 10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 50 V DS = 10 V Pulse Test 20 10 Tc = –25 °C 5 25 °C 75 °C 2 1 0.5 0.1 0.2 0.5 1 2 5 Drain Current I D (A) 10 5 5 Page

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PDF HAT2038R Data sheet ( Hoja de datos )