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What is HAT2039R?

This electronic component, produced by the manufacturer "Hitachi Semiconductor", performs the same function as "Silicon N Channel Power MOS FET High Speed Power Switching".


HAT2039R Datasheet PDF - Hitachi Semiconductor

Part Number HAT2039R
Description Silicon N Channel Power MOS FET High Speed Power Switching
Manufacturers Hitachi Semiconductor 
Logo Hitachi Semiconductor Logo 


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Total 9 Pages



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HAT2039R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
SOP–8
78
DD
8 7 65
1 234
56
DD
ADE-208-667C (Z)
4th. Edition
February 1999
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain

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HAT2039R equivalent
HAT2039R
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10 di/dt = 20 A/µs
5 VGS = 0, Ta = 25°C
0.1 0.2 0.5 1 2
Reverse Drain Current
5 10
I DR (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0 10 20 30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
V DD = 5 V
10 V
40
I D= 8 A
20 V
30
VDS
20
VGS
10
8
6
4
10
V DD = 20 V
2
10 V
5V
0
0 4 8 12 16 20
Gate Charge Qg (nc)
Switching Characteristics
500
200
tf
100
t d(off)
50 t r
20 t d(on)
10
5
0.1
VGS = 4 V, V DD = 10 V
PW = 3 µs, duty < 1 %
0.2 0.5 1 2
5
Drain Current I D (A)
10
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HAT2039R electronic component.


Information Total 9 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
HAT2039RThe function is Silicon N Channel Power MOS FET High Speed Power Switching. Hitachi SemiconductorHitachi Semiconductor

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