HAT2040R PDF даташит
Спецификация HAT2040R изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching». |
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Детали детали
Номер произв | HAT2040R |
Описание | Silicon N Channel Power MOS FET Power Switching |
Производители | Hitachi Semiconductor |
логотип |
10 Pages
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HAT2040R
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 4 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on)=6.2m typ
Outline
SOP–8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
ADE-208-565D (Z)
5th. Edition
February 1999
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HAT2040R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
30
±20
15
120
15
2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Unit
V
V
A
A
A
W
°C
°C
2
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Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate to source leak current
Zero gate voltege drain
current
I GSS
I DSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Forward transfer admittance |yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body–drain diode reverse
recovery time
t rr
Note: 3. Pulse test
Min
30
—
—
1.0
—
—
18
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max
——
— ±0.1
—1
—
6.2
9.0
30
4400
950
400
90
15
18
110
440
160
170
0.9
2.5
8.0
13.0
—
—
—
—
—
—
—
—
—
—
—
1.17
55 —
HAT2040R
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10mA, VGS = 0
VGS = ±20V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10V, I D = 1mA
ID = 8A, VGS = 10V Note3
ID = 8A, VGS = 4V Note3
ID = 8A, VDS = 10V Note3
VDS = 10V
VGS = 0
f = 1MHz
VDD = 10V
VGS = 10V
ID = 15A
VGS = 4V, ID = 8A
VDD ≅ 10V
IF = 15A, VGS = 0 Note3
IF = 15A, VGS = 0
diF/ dt =20A/µs
3
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Номер в каталоге | Описание | Производители |
HAT2040R | Silicon N Channel Power MOS FET Power Switching | Hitachi Semiconductor |
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