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HAT2051T PDF даташит

Спецификация HAT2051T изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «Silicon N Channel Power MOS FET High Speed Power Switching».

Детали детали

Номер произв HAT2051T
Описание Silicon N Channel Power MOS FET High Speed Power Switching
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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HAT2051T Даташит, Описание, Даташиты
HAT2051T
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
ADE-208-661A (Z)
2nd. Edition
February 1999
TSSOP–8
1
D
87 6 5
8 123 4
D
45
GG
SS
23
MOS1
SS
67
MOS2
1, 8 Drain
2, 3, 6, 7 Source
4, 5 Gate









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HAT2051T Даташит, Описание, Даташиты
HAT2051T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
30
± 10
1
4
1
0.8
V
V
A
A
A
W
Channel dissipation
Pch Note3
1.2
W
Channel temperature
Tch 150 °C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW 10µs, duty cycle 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
30
± 10
0.75
1.4
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 4. Pulse test
Typ
0.14
0.2
2.2
155
75
35
12
30
35
25
0.81
35
Max
± 10
1
1.75
0.2
0.3
1.1
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 8 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 0.5 A, VGS = 10 V Note4
ID = 0.5 A, VGS = 4 V Note4
ID = 0.5 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1MHz
VGS = 4 V, ID = 0.5 A
VDD 10 V
IF = 1 A, VGS = 0 Note4
IF = 1 A, VGS = 0
diF/ dt = 20 A/µs
2









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HAT2051T Даташит, Описание, Даташиты
Main Characteristics
HAT2051T
Power vs. Temperature Derating
2.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
1.0
0.5
1
2
Drive
DOrpiveerOatpioernation
0 50 100 150 200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
10
3
1
0.3
0.1
0.03
0.01
10 µs
OtlihmpisietearadretibDoayCnisROinpDeSra(toionn)P(PWW=<1101Nm01mo0sst0se)5µs
Ta = 25°C
0.003 1 shot Pulse
0.001 1 Drive Operation
0.1 0.3 1 3 10 30
100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
5
4 10V
5V
3 4V
2.5 V
2
1 VGS = 2.0 V
Pulse Test
0 2 4 6 8 10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
5
4
3
2
–25°C
1
25°C
Tc = 75°C
V DS = 10 V
Pulse Test
0 1 23 45
Gate to Source Voltage V GS (V)
3










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Номер в каталогеОписаниеПроизводители
HAT2051TSilicon N Channel Power MOS FET High Speed Power SwitchingHitachi Semiconductor
Hitachi Semiconductor

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