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PDF HAT3008R Data sheet ( Hoja de datos )

Número de pieza HAT3008R
Descripción Silicon N/P Channel Power MOS FET High Speed Power Switching
Fabricantes Hitachi Semiconductor 
Logotipo Hitachi Semiconductor Logotipo



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No Preview Available ! HAT3008R Hoja de datos, Descripción, Manual

HAT3008R/HAT3008RJ
Silicon N/P Channel Power MOS FET
High Speed Power Switching
Features
For Automotive Application ( at Type Code “J “)
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
ADE-208-536B (Z)
3rd. Edition
February 1999
SOP–8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
Nch
S3
Pch
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain

1 page




HAT3008R pdf
Main Characteristics ( N Channel )
HAT3008R/HAT3008RJ
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0 1 Drive Operation
0 50 100 150 200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
100
10 µs
30
10
3
1
0.3
0.1
PW
= 10
OperationDiCnOperation
this area is
(PW
limited by R DS(on) <
1
100
ms
µs
ms (1shot)
1N0oste) 5
0.03 Ta = 25 °C
0.01 1 shot pulse
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
10
10 V
4V
8 3.5 V
3V
6 Pulse Test
4
2.5 V
2
VGS = 2 V
0 2 4 6 8 10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
10
V DS = 10 V
Pulse Test
8
6
25°C
Tc = 75°C
4
–25°C
2
0 1 23 45
Gate to Source Voltage V GS (V)
5

5 Page





HAT3008R arduino
HAT3008R/HAT3008RJ
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10 di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
200 Coss
100
50
Crss
20
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
00
V DD = –10 V I D = –3.5 A
–25 V
–20 –50 V
–4
–40
V DS
–60
V DD = –50 V
–80
–25 V
–10 V
V GS
–100
0
8 16 24 32
Gate Charge Qg (nc)
–8
–12
–16
–20
40
1000
300
100
30
10
Switching Characteristics
V GS = –10 V, V DD = –30 V
Pw = 5 µs, duty < 1 %
t d(off)
tf
tr
t d(on)
3
1
–0.1 –0.2 –0.5 –1 –2 –5
Drain Current I D (A)
–10
11

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