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HGTG40N60B3 PDF даташит

Спецификация HGTG40N60B3 изготовлена ​​​​«Harris» и имеет функцию, называемую «UFS Series N-Channel IGBT».

Детали детали

Номер произв HGTG40N60B3
Описание UFS Series N-Channel IGBT
Производители Harris
логотип Harris логотип 

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HGTG40N60B3 Даташит, Описание, Даташиты
HGTG40N60B3S E M I C O N D U C T O R
PRELIMINARY
May 1995
70A, 600V, UFS Series N-Channel IGBT
Features
• 70A, 600V at TC = +25oC
• Square Switching SOA Capability
• Typical Fall Time - 160ns at +150oC
• Short Circuit Rating
• Low Conduction Loss
Package
JEDEC STYLE TO-247
E
C
G
Description
The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25oC and +150oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG40N60B3
TO-247
G40N60B3
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49052
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage, RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous
At TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TC = +150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TC = +125oC, RGE = 25Ω.
HGTG40N60B3
600
600
70
40
330
±20
±30
160A at 0.8 BVCES
290
2.33
-40 to +150
260
2
10
UNITS
V
V
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
9-3
File Number 3943









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HGTG40N60B3 Даташит, Описание, Даташиты
Specifications HGTG40N60B3
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Latching Current
BVCES
ICE = 250µA, VGE = 0V
600 - - V
ICES
VCE = BVCES
TJ = +25oC
-
- 250 A
VCE = BVCES
TJ = +150oC
-
- 7.5 mA
VCE(SAT)
ICE = 40A
VGE = 15V
TJ = +25oC
- 1.4 2.0 V
TJ = +150oC - 1.5 2.3 V
VGE(TH)
ICE = 250A,
VCE = VGE
TJ = +25oC 3.0 5 6.0 V
IGES
IL
VGE = ±20V
TJ = +150oC
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 3
L = 45µH
-
-
±300
nA
160 - - A
Gate-Emitter Plateau Voltage
VGEP
ICE = 40A, VCE = 0.5 BVCES
- 8.0 -
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
ICE = 40A,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
TJ = +150oC
ICE = 40A
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 3
L = 100µH
-
240 320
nC
-
350 450
nC
- 50 - ns
- 40 - ns
-
350 435
ns
-
160 200
ns
Turn-On Energy
EON
- 1400 -
J
Turn-Off Energy (Note 1)
Thermal Resistance
EOFF
RθJC
- 3300 -
J
- - 0.43 oC/W
NOTE:
1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTG40N60B3 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
9-4









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HGTG40N60B3 Даташит, Описание, Даташиты
HGTG40N60B3
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
200
180
160
140
TC = +150oC
120
100
TC = +25oC
80
60
TC = -40oC
40
20
0
0 2 4 6 8 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
12
100
90 DIE LIMIT
80
70 VGE = 15V
60 PACKAGE LIMIT
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
200
180
VGE = 15V
12V
10V
160
9.5V
140
120
9V
100
80 8.5V
60
8.0V
40
7.5V
20 7.0V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VGE = 15V
200
150
TC = -40oC
TC = +25oC
100
TC = +150oC
50
0
01234
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
FREQUENCY = 1MHz
14
12
CISS
10
8
6
4
COSS
2
CRSS
0
0 5 10 15 20 25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
IG(REF) = 4.06mA, RL = 7.5, TC = +25oC
600 20
450 BVCE = 600V
15
300 10
BVCE = 400V
150 5
BVCE = 200V
00
0 50 100 150 200 250
QG, GATE CHARGE (nC)
FIGURE 6. GATE CHARGE WAVEFORMS
9-5










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