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даташит AS6C1016 PDF ( Datasheet )

AS6C1016 Datasheet Download - Alliance Semiconductor

Номер произв AS6C1016
Описание 64K X 16 BIT LOW POWER CMOS SRAM
Производители Alliance Semiconductor
логотип Alliance Semiconductor логотип 



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AS6C1016 Даташит, Описание, Даташиты
AS6C1016
64K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 1.3
Rev. 1.4
Description
Initial Issue
Revised FEATURES & ORDERING INFORMATION
Lead free and green package available to Green package
available
Added packing type in ORDERING INFORMATION
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Revised PACKAGE OUTLINE DIMENSION in page 11
Revised VDR to 1.5V
Revised ORDERING INFORMATION in page 12
Revised typo in PRODUCT FAMILY page 1
Deleted E Grade
Issue Date
Nov.19.2008
May.6.2010
Aug.30.2010
Oct.4.2010
Aug.9.2011
Alliance Memory, Inc.
Rev. 1.4
0







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AS6C1016 Даташит, Описание, Даташиты
AS6C1016
64K X 16 BIT LOW POWER CMOS SRAM
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 20mA (TYP.)
Standby current : 2A (TYP.)
Single 2.7V ~ 5.5V power supply
All outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
GENERAL DESCRIPTION
The AS6C1016 is a 1,048,576-bit low power CMOS
static random access memory organized as 65,536
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The AS6C1016 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The AS6C1016 operates from a single power
supply of 2.7V ~ 5.5V and all inputs and outputs are
fully TTL compatible
Product
Family
AS6C1016(I)
Operating
Temperature
-40 ~ 85
Vcc Range
2.7 ~ 5.5V
Speed
55/70ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
2µA 20/18mA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A15
DECODER
64Kx16
MEMORY ARRAY
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
COLUMN I/O
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0 - A15
Address Inputs
DQ0 DQ15 Data Inputs/Outputs
CE# Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB# Lower Byte Control
UB# Upper Byte Control
VCC Power Supply
VSS Ground
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Alliance Memory, Inc.
Rev. 1.4
1







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AS6C1016 Даташит, Описание, Даташиты
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
TSOP II
AS6C1016
64K X 16 BIT LOW POWER CMOS SRAM
44 A5
43 A6
42 A7
41 OE#
40 UB#
39 LB#
38 DQ15
37 DQ14
36 DQ13
35 DQ12
34 Vss
33 Vcc
32 DQ11
31 DQ10
30 DQ9
29 DQ8
28 NC
27 A8
26 A9
25 A10
24 A11
23 NC
A LB# OE# A0 A1 A2 NC
B DQ8 UB# A3 A4 CE# DQ0
C DQ9 DQ10 A5 A6 DQ1 DQ2
D Vss DQ11 NC A7 DQ3 Vcc
E Vcc DQ12 NC NC DQ4 Vss
F DQ14 DQ13 A14 A15 DQ5 DQ6
G DQ15 NC A12 A13 WE# DQ7
H NC A8 A9 A10 A11 NC
123456
TFBGA
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
VT1
VT2
TA
TSTG
PD
IOUT
RATING
-0.5 to 6.5
-0.5 to VCC+0.5
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Alliance Memory, Inc.
Rev. 1.4
2










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