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HB56SW3272ESK-5 PDF даташит

Спецификация HB56SW3272ESK-5 изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)».

Детали детали

Номер произв HB56SW3272ESK-5
Описание 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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HB56SW3272ESK-5 Даташит, Описание, Даташиты
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM
32-Mword × 72-bit, 4k Refresh, 2 Bank Module
(36 pcs of 16M × 4 components)
ADE-203-872B (Z)
Rev. 1.0
June 23, 1998
Description
The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been
developed an optimized main memory solution for 4 and 8-byte processor applications. The
HB56SW3272ESK is 32 M × 72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM
(HM5165405) sealed in TCP package and 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP
package. The HB56SW3272ESK offer Extended Data Out (EDO) Page Mode as a high speed access
mode. An outline of the HB56SW3272ESK are 168-pin socket type package (dual lead out). Therefore, the
HB56SW3272ESK make high density mounting possible without surface mount technology. The
HB56SW3272ESK provide common data inputs and outputs. Decoupling capacitors are mounted beside
each TCP on its module board.
Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which
would be electrical defects.
Features
168-pin socket type package (Dual lead out)
Lead pitch : 1.27 mm
Single 3.3 V supply (±0.3 V)
High speed
Access time: tRAC = 50 ns/60 ns (max)
Access time: tCAC = 18 ns/20 ns (max)
Low power dissipation
Active mode: 8.78 W/7.49 W (max)
Standby mode (TTL): 295.2 mW (max)
JEDEC standard outline buffered 8-byte DIMM
Buffered input except RAS and DQ









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HB56SW3272ESK-5 Даташит, Описание, Даташиты
HB56SW3272ESK-5/6
4-byte interleave enabled, dual address input (A0/B0)
EDO page mode capability
4096 refresh cycles: 64 ms
2 variations of refresh
RAS-only refresh
CAS-before-RAS refresh
Ordering Information
Type No.
HB56SW3272ESK-5
HB56SW3272ESK-6
Access time
50 ns
60 ns
Package
168-pin dual lead out
socket type
Contact pad
Gold
Pin Arrangement
1 pin 10 pin 11 pin 40 pin 41 pin
84 pin
85 pin 94 pin 95 pin 124 pin 125 pin
168 pin
2









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HB56SW3272ESK-5 Даташит, Описание, Даташиты
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Signal name Pin No.
VSS
DQ0
43
44
DQ1
45
DQ2
46
DQ3
47
VCC
DQ4
48
49
DQ5
50
DQ6
51
DQ7
52
DQ8
53
VSS
DQ9
54
55
DQ10
56
DQ11
57
DQ12
58
DQ13
59
VCC
DQ14
60
61
DQ15
62
DQ16
63
DQ17
64
VSS 65
NC 66
NC 67
VCC
WE0
68
69
CE0
70
NC 71
RE0
72
OE0
73
VSS 74
A0 75
A2 76
A4 77
Signal name Pin No.
VSS
OE2
85
86
RE2
87
CE4
88
NC 89
WE2
90
VCC 91
NC 92
NC 93
DQ18
94
DQ19
95
VSS
DQ20
96
97
DQ21
98
DQ22
99
DQ23
100
VCC
DQ24
101
102
NC 103
NC 104
NC 105
NC 106
DQ25
107
DQ26
108
DQ27
109
VSS
DQ28
110
111
DQ29
112
DQ30
113
DQ31
114
VCC
DQ32
115
116
DQ33
117
DQ34
118
DQ35
119
HB56SW3272ESK-5/6
Signal name Pin No.
VSS
DQ36
127
128
DQ37
129
DQ38
130
DQ39
131
VCC
DQ40
132
133
DQ41
134
DQ42
135
DQ43
136
DQ44
137
VSS
DQ45
138
139
DQ46
140
DQ47
141
DQ48
142
DQ49
143
VCC
DQ50
144
145
DQ51
146
DQ52
147
DQ53
148
VSS 149
NC 150
NC 151
VCC 152
NC 153
CE1
154
NC 155
RE1
156
NC 157
VSS 158
A1 159
A3 160
A5 161
Signal name
VSS
NC
RE3
CE5
NC
PDE
VCC
NC
NC
DQ54
DQ55
VSS
DQ56
DQ57
DQ58
DQ59
VCC
DQ60
NC
NC
NC
NC
DQ61
DQ62
DQ63
VSS
DQ64
DQ65
DQ66
DQ67
VCC
DQ68
DQ69
DQ70
DQ71
3










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Номер в каталогеОписаниеПроизводители
HB56SW3272ESK-5256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)Hitachi Semiconductor
Hitachi Semiconductor
HB56SW3272ESK-6256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)Hitachi Semiconductor
Hitachi Semiconductor

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