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AS6C1616 Datasheet Download - Alliance Semiconductor

Номер произв AS6C1616
Описание 1024K X 16 BIT LOW POWER CMOS SRAM
Производители Alliance Semiconductor
логотип Alliance Semiconductor логотип 



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AS6C1616 Даташит, Описание, Даташиты
APRIL 2010
AS6C1616
1024K X 16 BIT LOW POWER CMOS SRAM
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 45/30mA (TYP.)
Standby current : 10µA (TYP.) LL-version
4µA (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.2V (MIN.)
Green package available
Package : 48-pin 12mm x 20mm TSOP-I
PRODUCT FAMILY
Product
Family
AS6C1616(I)
Operating
Temperature
-40 ~ 85
Vcc Range
2.7 ~ 3.6V
GENERAL DESCRIPTION
The AS6C1616 is a 16,777,216-bit low power
CMOS static random access memory organized as
1,048,576 words by 16 bits. It is fabricated using
very high performance, high reliability CMOS
technology. Its standby current is stable within the
range of operating temperature.
The AS6C1616 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The AS6C1616 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
Speed
55ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
10µA (LL)/4µA(SL)
45/30mA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A19
DECODER
1024Kx16
MEMORY ARRAY
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
CE#
CE2
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
COLUMN I/O
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0 - A19
Address Inputs
DQ0 – DQ15 Data Inputs/Outputs
CE#, CE2 Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB# Lower Byte Control
UB# Upper Byte Control
VCC Power Supply
VSS Ground
APRIL/2010 V1.b
ALLIANCE MEMORY
PAGE 1 of 11







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AS6C1616 Даташит, Описание, Даташиты
APRIL 2010
AS6C1616
1024K X 16 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
CE2
NC
UB#
LB#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
AS6C1616
TSOP-I
48 A16
47 NC
46 Vss
45 DQ15
44 DQ7
43 DQ14
42 DQ6
41 DQ13
40 DQ5
39 DQ12
38 DQ4
37 Vcc
36 DQ11
35 DQ3
34 DQ10
33 DQ2
32 DQ9
31 DQ1
30 DQ8
29 DQ0
28 OE#
27 Vss
26 CE#
25 A0
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VCC relative to VSS
VT1 -0.5 to 4.6
V
Voltage on any other pin relative to VSS
VT2 -0.5 to VCC+0.5
V
Operating Temperature
TA -40 to 85(I grade)
Storage Temperature
TSTG
-65 to 150
Power Dissipation
PD 1 W
DC Output Current
IOUT 50 mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
APRIL/2010 V1.b
ALLIANCE MEMORY
PAGE 2 of 11







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AS6C1616 Даташит, Описание, Даташиты
APRIL 2010
AS6C1616
1024K X 16 BIT LOW POWER CMOS SRAM
TRUTH TABLE
MODE
CE# CE2 OE#
HX
Standby
XL
XX
Output Disable
L
L
H
H
LH
Read
LH
LH
LH
Write
LH
LH
Note: H = VIH, L = VIL, X = Don't care.
X
X
X
H
H
L
L
L
X
X
X
WE# LB#
XX
XX
XH
HL
HX
HL
HH
HL
LL
LH
LL
UB#
X
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7 DQ8-DQ15
High – Z High – Z
High – Z High – Z
High – Z High – Z
High – Z High – Z
High – Z High – Z
DOUT
High – Z
DOUT
DIN
High – Z
DIN
High – Z
DOUT
DOUT
High – Z
DIN
DIN
SUPPLY CURRENT
ISB,ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
DC ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL
TEST CONDITION
Supply Voltage
Input High Voltage
Input Low Voltage
VCC
VIH*1
VIL*2
Input Leakage Current
ILI VCC VIN VSS
Output Leakage
Current
ILO
VCC VOUT VSS,
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL IOL = 2mA
Cycle time = Min.
ICC
CE# = VIL and CE2 = VIH
II/O = 0mA
- 55
Average Operating
Other pins at VIL or VIH
Power supply Current
Cycle time = 1µs
ICC1
CE#0.2V and CE2VCC-0.2V
II/O = 0mA
other pins at 0.2V or VCC-0.2V
ISB
CE# = VIH or CE2 = VIL
Other pins at VIL or VIH
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
-
TYP. *4
3.0
-
-
-
MAX.
3.6
VCC+0.3
0.6
1
-1
2.7 -
- 0.4
UNIT
V
V
V
µA
µA
V
V
45 60 mA
8 16 mA
0.3 2 mA
Standby Power
Supply Current
CE# VCC-0.2V
ISB1
or CE20.2V
Other pins at 0.2V
or VCC-0.2V
LLI
25
SLI*5
40
SLI
-
-
-
-
10 100 µA
4 6 µA
4 6 µA
4 40 µA
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
APRIL/2010 V1.b
ALLIANCE MEMORY
PAGE 3 of 11










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