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AS6C1616A-55BIN PDF даташит

Спецификация AS6C1616A-55BIN изготовлена ​​​​«Alliance Semiconductor» и имеет функцию, называемую «1024K X 16 BIT LOW POWER CMOS SRAM».

Детали детали

Номер произв AS6C1616A-55BIN
Описание 1024K X 16 BIT LOW POWER CMOS SRAM
Производители Alliance Semiconductor
логотип Alliance Semiconductor логотип 

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AS6C1616A-55BIN Даташит, Описание, Даташиты
AUGUST 2010
AS6C1616A
1024K X 16 BIT LOW POWER CMOS SRAM
FEATURES
GENERAL DESCRIPTION
• Process Technology : 0.15μm Full CMOS
• Organization : 1M x 16 bit
• Power Supply Voltage : 2.7V ~ 3.6V
• Low Data Retention Voltage : 1.5V(Min.)
• Three state output and TTL Compatible
• Package Type : 48-FPBGA
TheAS6C1616A - 55%,1 is fabricated by Alliance's
advanced full CMOS process technology. The device
supports industrial temperature range and Chip Scale
Package for user flexibility of system design. The device
also supports low data retention voltage for battery back-
up operation with low data retention current.
PRODUCT FAMILY
Product
Family
Operating
Temperature
Vcc
Range
AS6C1616A - 55 BIN
Industrial
(-40 ~ 85oC)
2.7 ~ 3.6 V
Speed
55ns
Power Dissipation
Standby
Operating
(ISB1, Typ.) (ICC1.Max.)
PKG
Type
4 μA1)
8 mA
48-FPBGA
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
DQ0 ~ DQ7
DQ8 ~ DQ15
Memory Array
1M x 16
Data
Cont I/O Circuit
Data
Cont Column Select
VCC
VSS
A11 A12 A13 A14 A15 A16 A17 A18 A19
WE
OE
UB Control Logic
LB
CS1
CS2
1









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AS6C1616A-55BIN Даташит, Описание, Даташиты
AUGUST 2010
1024K X 16 BIT LOW POWER CMOS SRAM
PIN CONFIGURATIONS
FPBGA-48 : Top view(ball down)
123456
A LB OE A0 A1 A2 CS2
B DQ8
UB
A3
A4 CS1 DQ0
C DQ9 DQ10
A5
A6 DQ1 DQ2
D VSS DQ11 A17
A7
DQ3
VCC
E VCC DQ12 NC A16 DQ4 VSS
F DQ14 DQ13 A14 A15 DQ5 DQ6
G DQ15 A19 A12 A13 WE DQ7
H A18
A8
A9 A10 A11 NC
AS6C1616A
PIN DESCRIPTION
Name
Function
CS1, CS2
Chip Select inputs
OE Output Enable input
WE Write Enable input
A0~A19
Address inputs
DQ0~DQ15 Data inputs/outputs
Name
VCC
VSS
UB
LB
NC
Function
Power Supply
Ground
Upper Byte (DQ8~DQ15)
Lower Byte (DQ0~DQ7)
No Connection
2









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AS6C1616A-55BIN Даташит, Описание, Даташиты
AUGUST 2010
AS6C1616A
1024K X 16 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUM RATINGS1)
Parameter
Symbol
Ratings
Unit
Voltage on Any Pin Relative to Vss
VIN, VOUT
-0.2 to 4.0
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 4.0
V
Power Dissipation
PD 1.0 W
Operating Temperature
TA
-40 to 85
oC
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
FUNCTIONAL DESCRIPTION
CS1 CS2 OE WE LB UB
HXXXXX
XLXXXX
XXXXHH
LHHHL X
LHHHX L
LHLHLH
L H L HH L
LHLHL L
LHXL LH
L HX L H L
LHXL L L
NOTE : X means don’t care. (Must be low or high state)
DQ0~7 DQ8~15
Mode
High-Z High-Z
Deselected
High-Z High-Z
Deselected
High-Z
High-Z
High-Z
Data Out
High-Z
High-Z
High-Z
High-Z
Deselected
Output Disabled
Output Disabled
Lower Byte Read
High-Z Data Out Upper Byte Read
Data Out Data Out
Word Read
Data In High-Z Lower Byte Write
High-Z
Data In
Data In
Data In
Upper Byte Write
Word Write
Power
Stand by
Stand by
Stand by
Active
Active
Active
Active
Active
Active
Active
Active
3










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Номер в каталогеОписаниеПроизводители
AS6C1616A-55BIN1024K X 16 BIT LOW POWER CMOS SRAMAlliance Semiconductor
Alliance Semiconductor

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