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H57V2622GMR-60X PDF даташит

Спецификация H57V2622GMR-60X изготовлена ​​​​«Hynix Semiconductor» и имеет функцию, называемую «256Mb Dual Die Synchronous DRAM».

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Номер произв H57V2622GMR-60X
Описание 256Mb Dual Die Synchronous DRAM
Производители Hynix Semiconductor
логотип Hynix Semiconductor логотип 

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H57V2622GMR-60X Даташит, Описание, Даташиты
256Mb : x32 Dual Die Synchronous DRAM
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256M (8Mx32bit) Hynix SDRAM
Memory
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Oct. 2009
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H57V2622GMR-60X Даташит, Описание, Даташиты
111www.DataSheet4U.com
Synchronous DRAM Memory 256Mbit
H57V2622GMR Series
Document Title
256Mbit (8M x32) Synchronous DRAM
Revision History
Revision No.
0.1
1.0
History
Initial Draft
Release
Draft Date
Sep. 2009
Oct. 2009
Remark
Preliminary
Rev 1.0 / Oct. 2009
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H57V2622GMR-60X Даташит, Описание, Даташиты
111www.DataSheet4U.com
Synchronous DRAM Memory 256Mbit
H57V2622GMR Series
DESCRIPTION
The Hynix H57V2622GMR Synchronous DRAM (Dual Die) ideally suited for the consumer memory applications which
requires large memory density and high bandwidth uses Hinix’s 128Mb SDR monolithic die and has similar functional-
ity.
Synchronous DRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Synchronous
DRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization
with the input clock (CLK). The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x32
Input/ Output bus. All the commands are latched in synchronization with the rising edge of CLK.
The Synchronous DRAM provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4,
8 locations or full page. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is
initiated at the end of the burst access. The Synchronous DRAM uses an internal pipelined architecture to achieve
high-speed operation. This architecture is compartible with the 2n rule of prefetch architectures, but it also allows the
column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one
bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed,
randon-access operation.
Read and write accesses to the Hynix Synchronous DRAM are burst oriented;
accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.
Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command.
The address bits registered coincident with the ACTIVE command are used to select the bank and the row to be
accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and
the starting column location for the burst access.
A burst of Read or Write cycles in progress can be terminated by a burst terminate command or can be interrupted
and replaced by a new burst Read or Write command on any cycle(This pipelined design is not restricted by a 2N rule).
All inputs are LVTTL compatible. Devices will have a VDD and VDDQ supply of 3.3V (nominal).
Rev 1.0 / Oct. 2009
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Номер в каталогеОписаниеПроизводители
H57V2622GMR-60X256Mb Dual Die Synchronous DRAMHynix Semiconductor
Hynix Semiconductor
H57V2622GMR-60X256Mb Dual Die Synchronous DRAMHynix Semiconductor
Hynix Semiconductor

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