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PDF H5PS1G43EFR Data sheet ( Hoja de datos )
| Número de pieza | H5PS1G43EFR | |
| Descripción | 1Gb DDR2 SDRAM | |
| Fabricantes | Hynix | |
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H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
1Gb DDR2 SDRAM
H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.4 / Nov 2008
1
1 page  
H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
1.2 Pin Configuration & Address Table
256Mx4 DDR2 Pin Configuration(Top view: see balls through package)
123
789
VDD NC VSS
A VSSQ DQS VDDQ
NC VSSQ DM
B
DQS VSSQ
NC
VDDQ DQ1 VDDQ C VDDQ DQ0 VDDQ
NC
VDDL
VSSQ
VREF
CKE
DQ3
VSS
WE
D
DQ2 VSSQ
NC
E
VSSDL
CK
VDD
F RAS CK ODT
BA2 BA0 BA1 G CAS CS
A10 A1 H A2 A0 VDD
VSS A3
A5
J
A6 A4
A7 A9 K A11 A8 VSS
VDD
A12
NC
L
NC A13
Rev. 0.4 / Nov 2008
ROW AND COLUMN ADDRESS TABLE
ITEMS
# of Bank
Bank Address
Auto Precharge Flag
Row Address
Column Address
Page size
256Mx4
8
BA0,BA1,BA2
A10/AP
A0 - A13
A0-A9, A11
1 KB
5
5 Page 
H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
3. AC & DC Operating Conditions
3.1 DC Operating Conditions
3.1.1 Recommended DC Operating Conditions (SSTL_1.8)
Symbol
VDD
VDDL
VDDQ
VREF
VTT
Parameter
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
Min.
1.7
1.7
1.7
0.49*VDDQ
VREF-0.04
Rating
Typ.
1.8
1.8
1.8
0.50*VDDQ
VREF
Max.
1.9
1.9
1.9
0.51*VDDQ
VREF+0.04
Units
V
V
V
mV
V
Notes
1
1,2
1,2
3,4
5
Note:
1. Min. Typ. and Max. values increase by 100mV for C3(DDR2-533 3-3-3) speed option.
2. VDDQ tracks with VDD,VDDL tracks with VDD. AC parameters are measured with VDD,VDDQ and VDD.
3. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the
value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track varia-
tions in VDDQ
4. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).
5. VTT of transmitting device must track VREF of receiving device.
3.1.2 ODT DC electrical characteristics
PARAMETER/CONDITION
Rtt effective impedance value for EMR(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMR(A6,A2)=1,0; 150 ohm
Rtt effective impedance value for EMR(A6,A2)=1,1; 50 ohm
Deviation of VM with respect to VDDQ/2
SYMBOL
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
delta VM
MIN
60
120
40
-6
NOM
75
150
50
MAX
90
180
60
+6
UNITS NOTES
ohm 1
ohm 1
ohm 1
%1
Note:
1. Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac))
and I(VIL(ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18
Rtt(eff) =
VIH (ac) - VIL (ac)
I(VIH (ac)) - I(VIL (ac))
Measurement Definition for VM: Measurement Voltage at test pin (mid point) with no load.
2 x Vm
delta VM =(
- 1) x 100%
VDDQ
Rev. 0.4 / Nov 2008
11
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