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PDF HBFP-0420-TR1 Data sheet ( Hoja de datos )
| Número de pieza | HBFP-0420-TR1 | |
| Descripción | High Performance Isolated Collector Silicon Bipolar Transistor | |
| Fabricantes | ETC | |
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High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
HBFP-0420
Features
• Ideal for High Gain, Low
Noise Applications
• Transition Frequency
fT = 25 GHz
• Typical Performance at
1.8 GHz
Associated Gain of 17 dB
and Noise Figure of 1.1 dB
at 2 V and 5 mA
P1dB of 12 dBm at 2 V and
20 mA
• Can be Used Without
Impedance Matching
Applications
• LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
• Oscillator for TV Delivery
and TVRO Systems up to
10 GHz
Surface Mount Plastic
Package/ SOT-343 (SC-70)
Outline 4T
Description
Hewlett Packard’s HBFP-0420 is a
high performance isolated
collector silicon bipolar junction
transistor housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Pin Configuration
Base
Emitter
HBFP-0420 provides an associated
gain of 17 dB, noise figure of
1.1 dB, and P1dB of 12 dBm at
1.8 GHz. Because of high gain and
low current characteristics,
HBFP-0420 is ideal for cellular/
PCS handsets as well as for
C-Band and Ku-Band
applications.
Emitter
Collector
Note:
Package marking provides orientation
and identification.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, low noise applica-
tions at 900 MHz, 1.9 GHz,
2.4 GHz, and beyond.
1 page  
5
HBFP-0420 Typical Performance
25
2 mA
5 mA
20 10 mA
15 mA
15
10
5
0
0 2 4 6 8 10
FREQUENCY (GHz)
Figure 1. Associated Gain vs.
Frequency and Collector Current
at 2 V.
4
3
2
1 2 mA
5 mA
10 mA
15 mA
0
02
46
8 10
FREQUENCY (GHz)
Figure 2. Noise Figure vs.
Frequency and Collector Current at
2 V.
3.00
2.50
2.00
1.50
0.9 GHz
1.00 1.8 GHz
2.5 GHz
3 GHz
0.50 4 GHz
5 GHz
0 6 GHz
0 5 10 15 20 25
COLLECTOR CURRENT (mA)
Figure 4. Noise Figure vs. Collector
Current and Frequency at 2 V.
25
0.9 GHz
20
1.8 GHz
2.5 GHz
15 3 GHz
4 GHz
10 5 GHz
6 GHz
5
0
01 2 3 4 56
VOLTAGE (V)
Figure 5. Associated Gain vs. Voltage
(VCE) at 5 mA.
30
25
0.9 GHz
1.8 GHz
20 2.5 GHz
3 GHz
15 4 GHz
5 GHz
10 6 GHz
5
0
0 5 10 15 20 25
COLLECTOR CURRENT (mA)
Figure 3. Associated Gain vs.
Collector Current and Frequency
at 2 V.
2.5
2.0
1.5
1.0 0.9 GHz
1.8 GHz
2.5 GHz
0.5
3 GHz
4 GHz
5 GHz
0 6 GHz
01 2 3 4 56
VOLTAGE (V)
Figure 6. Noise Figure vs. Voltage
(VCE) at 5 mA.
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HBFP-0420-TR1.PDF ] | |
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