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HBFP0420 PDF даташит

Спецификация HBFP0420 изготовлена ​​​​«ETC» и имеет функцию, называемую «High Performance Isolated Collector Silicon Bipolar Transistor».

Детали детали

Номер произв HBFP0420
Описание High Performance Isolated Collector Silicon Bipolar Transistor
Производители ETC
логотип ETC логотип 

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HBFP0420 Даташит, Описание, Даташиты
High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
HBFP-0420
Features
• Ideal for High Gain, Low
Noise Applications
• Transition Frequency
fT = 25 GHz
• Typical Performance at
1.8 GHz
Associated Gain of 17 dB
and Noise Figure of 1.1 dB
at 2 V and 5 mA
P1dB of 12 dBm at 2 V and
20 mA
• Can be Used Without
Impedance Matching
Applications
• LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
• Oscillator for TV Delivery
and TVRO Systems up to
10 GHz
Surface Mount Plastic
Package/ SOT-343 (SC-70)
Outline 4T
Description
Hewlett Packard’s HBFP-0420 is a
high performance isolated
collector silicon bipolar junction
transistor housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Pin Configuration
Base
Emitter
HBFP-0420 provides an associated
gain of 17 dB, noise figure of
1.1 dB, and P1dB of 12 dBm at
1.8 GHz. Because of high gain and
low current characteristics,
HBFP-0420 is ideal for cellular/
PCS handsets as well as for
C-Band and Ku-Band
applications.
Emitter
Collector
Note:
Package marking provides orientation
and identification.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, low noise applica-
tions at 900 MHz, 1.9 GHz,
2.4 GHz, and beyond.









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HBFP0420 Даташит, Описание, Даташиты
2
HBFP-0420 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
1.5
15.0
4.5
36
162
150
-65 to 150
Thermal Resistance:
θjc = 300°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. PT limited by maximum ratings.
Electrical Specifications, TC = 25°C
Symbol
Parameters and Test Conditions
Units
DC Characteristics
BVCEO Collector-Emitter Breakdown Voltage
IC = 1 mA, open base V
ICBO Collector-Cutoff Current
VCB = 5 V, IE = 0 nA
IEBO Emitter-Base Cutoff Current
VEB = 1.5 V, IC = 0 µA
hFE DC Current Gain
VCE = 2 V, IC = 5 mA —
RF Characteristics
FMIN Minimum Noise Figure
IC = 5 mA, VCE = 2 V, f = 1.8 GHz dB
Ga Associated Gain
|S21|2 Insertion Power Gain
IC = 5 mA, VCE = 2 V, f = 1.8 GHz dB
IC = 20 mA, VCE = 2 V, f = 1.8 GHz dB
P-1dB Power Output @ 1 dB
Compression Point
IC = 20 mA, VCE = 2 V, f = 1.8 GHz dBm
Min.
4.5
50
15.5
Typ.
80
1.1
17
17
12
Max.
150
15
150
1.4









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HBFP0420 Даташит, Описание, Даташиты
3
HBFP-0420 Typical Scattering Parameters,
VCE = 2 V, IC = 5 mA, TC = 25°C
Freq.
S11
S21
GHz
Mag
Ang
dB
Mag Ang
0.1 0.746 -11.9 23.4 14.853 171.0
0.5 0.682 -55.6 21.9 12.473 139.8
0.9 0.607 -90.1 19.9 9.909 116.8
1.0 0.585 -97.5 19.3 9.181 112.2
1.5 0.532 -128.3 16.8 6.918 93.1
1.8 0.512 -143.1 15.5 5.952 83.4
2.0 0.502 -151.6 14.7 5.453 78.4
2.5 0.490 -169.8 12.9 4.422 65.8
3.0 0.483 -174.6 11.6 3.786 55.2
3.5 0.480 161.4 10.3 3.286 45.2
4.0 0.479 149.2 9.3 2.908 35.7
4.5 0.482 137.6 8.4 2.629 26.5
5.0 0.487 126.5 7.6 2.389 17.4
5.5 0.497 115.4 6.9 2.205 8.3
6.0 0.513 105.0 6.2 2.040 -0.8
6.5 0.532 94.6 5.6 1.902 -9.8
7.0 0.553 84.0 5.0 1.778 -18.7
7.5 0.575 74.5 4.4 1.662 -27.5
8.0 0.592 66.0 3.9 1.559 -36.1
8.5 0.609 58.2 3.3 1.469 -44.4
9.0 0.623 50.7 2.9 1.393 -52.6
9.5 0.635 43.0 2.4 1.312 -60.8
10.0 0.648 34.5 1.9 1.248 -69.1
dB
-41.4
-28.5
-25.0
-24.5
-22.9
-22.3
-21.9
-21.2
-20.5
-19.8
-19.2
-18.5
-17.9
-17.3
-16.8
-16.3
-15.8
-15.3
-14.9
-14.6
-14.2
-13.9
-13.6
S12
Mag
0.009
0.038
0.056
0.059
0.072
0.077
0.080
0.088
0.095
0.102
0.110
0.118
0.127
0.136
0.145
0.153
0.162
0.171
0.179
0.186
0.195
0.202
0.209
Ang
84.8
63.6
49.3
46.9
37.2
33.2
31.2
26.9
23.4
19.8
16.3
12.5
8.1
3.5
-1.5
-7.1
-12.6
-18.2
-24.0
-29.8
-35.4
-41.6
-48.0
S22
Mag
Ang
0.985
0.861
0.696
0.661
0.516
0.450
0.419
0.359
0.314
0.286
0.266
0.248
0.233
0.209
0.189
0.161
0.134
0.115
0.110
0.113
0.120
0.127
0.130
-6.6
-29.4
-46.6
-49.3
-62.2
-67.7
-71.6
-78.4
-86.3
-92.5
-98.1
-104.1
-110.5
-117.9
-126.4
-137.1
-152.0
-171.2
167.1
147.2
130.6
118.0
103.9
HBFP-0420 Noise Parameters: VCE = 2 V, IC = 5 mA
Freq.
Fmin
Γopt
RN/50
GHz
dB Mag Ang
0.9
1.00 0.281
28.8
9.6
1.0
1.02 0.266
36.6
9.2
1.5
1.10 0.187
68.3
7.6
1.8
1.14 0.175
94.1
6.8
2.0
1.18
0.154
118.4
6.1
2.5
1.25
0.184
146.5
5.4
3.0
1.32
0.226
165.9
5.0
3.5
1.39
0.254
-176.8
4.9
4.0
1.49
0.292
-162.3
5.0
4.5
1.58
0.312
-147.3
6.0
5.0
1.63
0.355
-135.5
6.8
5.5
1.75
0.375
-121.0
9.3
6.0
1.88
0.416
-108.5
12.3
6.5
1.94
0.453
-98.1
15.8
7.0
2.05
0.486
-84.4
21.4
7.5
2.15
0.506
-74.8
26.8
8.0
2.23
0.532
-65.0
33.6
8.5
2.47
0.556
-56.8
41.7
9.0
2.59
0.589
-48.4
50.4
9.5
2.63
0.610
-40.4
58.2
10.0
2.74
0.624
-31.0
68.3
Ga
dB
22.19
21.39
18.30
16.92
16.21
14.34
13.00
11.79
10.79
9.95
9.22
8.55
7.99
7.47
6.99
6.49
6.04
5.65
5.32
4.91
4.56
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.










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