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SDT02N02 PDF даташит

Спецификация SDT02N02 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв SDT02N02
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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SDT02N02 Даташит, Описание, Даташиты
SDT02N02Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (Ω) Typ
200V 2A 2.5 @ VGS=10V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
G
S
SOT-223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TA=25°C
IDM -Pulsed a
PD
Maximum Power Dissipation a
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
200
±30
2
13
2.98
-55 to 175
42
Units
V
V
A
A
W
°C
°C/W
Details are subject to change without notice.
1
Jun,07,2012
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SDT02N02 Даташит, Описание, Даташиты
SDT02N02
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=160V , VGS=0V
VGS= ±30V , VDS=0V
200
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=1A
VDS=10V , ID=1A
2
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=100V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=100V,ID=1A,VGS=10V
VDS=100V,ID=1A,
VGS=10V
Typ
3
2.5
1.8
240
38
8
14.5
9
17
4.5
5.5
1.5
2
Max Units
1
±100
V
uA
nA
4V
3.1 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, n_ot subject to product_ion testing.
0.78 1.4
V
Jun,07,2012
2 www.samhop.com.tw









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SDT02N02 Даташит, Описание, Даташиты
SDT02N02
3.5
VGS = 10V
2.8
VGS = 7V
2.1 VGS = 6V
1.4
VGS = 5V
0.7
0
0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
6
5
4
3 VGS = 10V
2
1
0
0.1 0.7 1.4 2.1 2.8 3.5
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
V DS =V G S
1.4 ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.0
2.5
2.0
Tj=125 C
1.5
1.0
25 C -55 C
0.5
0
0 1.5 3 4.5 6 7.5 9
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.5
2.2
V G S =10V
1.9 ID= 1A
1.6
1.3
1.0
0.7
0
25 50 75 100 125
Tj, Junction Temperature ( C)
150
Tj( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Jun,07,2012
www.samhop.com.tw










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Номер в каталогеОписаниеПроизводители
SDT02N02N-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

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