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SDD02N25 PDF даташит

Спецификация SDD02N25 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Field Effect Transistor».

Детали детали

Номер произв SDD02N25
Описание N-Channel Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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SDD02N25 Даташит, Описание, Даташиты
Gre
Pro
SDU/D02N25
Sa mHop Microelectronics C orp.
N-Channel Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (Ω) Typ
250V 2A 3.2 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
SDU SERIES
TO - 252AA(D-PAK)
G
DS
SDD SERIES
TO - 251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TA=25°C
TA=70°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
250
±30
2
1.5
6
10.4
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jun,07,2012
www.samhop.com.tw









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SDD02N25 Даташит, Описание, Даташиты
SDU/D02N25
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=200V , VGS=0V
VGS= ±30V , VDS=0V
250
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=1A
VDS=10V , ID=1A
2
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=125V
ID=1A
VGS=10V
RGEN=25 ohm
VDS=125V,ID=1A,VGS=10V
VDS=125V,ID=1A,
VGS=10V
Typ
3
3.2
0.9
185
31
6.1
13.4
12.2
21.5
5.6
4.36
1.28
1.48
Max Units
1
±100
V
uA
nA
4V
4.2 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, n_ot subject to product_ion testing.
c.Starting TJ=25°C,L=1mH,RG=25Ω,VDD = 50V.(See Figure12)
0.81 1.4
V
Jun,07,2012
2 www.samhop.com.tw









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SDD02N25 Даташит, Описание, Даташиты
SDU/D02N25
4.0
VGS = 10V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
VGS = 6V
VGS = 5V
5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
7
6
5
VGS = 10V
4
3
2
1
0 0.7 1.4 2.1 2.8 3.5
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
1.1
V DS =V G S
ID=250uA
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.1
1.0
0.8
Tj=125 C
0.6
0.4
-55 C
25 C
0.2
0
0 1 2 3 4 56
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.5
V G S =10V
2.2
ID= 1A
1.9
1.6
1.3
1.0
0.7
0
25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.3
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Jun,07,2012
www.samhop.com.tw










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SDD02N25N-Channel Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

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