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Número de pieza H27UBG8T2CTR-BC
Descripción 32Gb(4096M x 8bit) Legacy MLC NAND Flash
Fabricantes Hynix Semiconductor 
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Preliminary
H27UBG8T2CTR-BC
32Gb(4096M x 8bit) Legacy MLC NAND Flash
F20 32Gb MLC
NAND Flash Memory
TSOP Legacy
H27UBG8T2CTR-BC
This document is a general product description and is subject to change without notice. SK hynix does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev 0.2 / Mar. 2012
1

1 page




H27UBG8T2CTR-BC pdf
Preliminary
H27UBG8T2CTR-BC
32Gb(4096M x 8bit) Legacy MLC NAND Flash
3.18. Random Data Input Timings ………………………………………………………………………………… 33
3.19. Multi Plane Page Program Operation Timings ………………………………………………………….. 34
3.20.
3.21.
Copy-Back Program Operation Timings with Random Date Input .………………………………..
Cache Program Operation Timings …………………………………………………………………………
35
35
3.22. Multi Plane Cache Program Operation Timings …………………………………………………………. 36
3.23. Block Erase Operation Timings ……………………………………………………………………………… 36
3.24. Multi Plane Erase Operation Timings ...................................................................................... 37
3.25. Reset Timings …………………………………………………………………………………………………… 37
4. Device Operation …………………………………………………………………………………………………… 38
4.1. Page Read ………………………………………………………………………………………………………….. 38
4.2. Cache Read ………………………………………………………………………………………………………… 39
4.3. Cache Read Enhanced ………………………………………………………………………………………….. 39
4.4. Multi Plane Page Read ………………………………………………………………………………………….. 40
4.5. Multi Plane Cache Read ………………………………………………………………………………………... 41
4.6. Multi Plane Cache Read Enhanced ………………………………………………………………………….. 41
4.7. Read ID …………………………………………………………………………………………………………….. 42
4.8. Read Status Register ……………………………………………………………………………………………. 43
4.9. Page Program …………………………………………………………………………………………………….. 44
4.10. Multi Plane Program …………………………………………………………………………………………… 45
4.11. Cache Program .…………………………………………………………………………………………………. 46
4.12. Multi Plane Cache Program .…………………………………………………………………………………. 48
4.13. Copy-Back Program ……………………………………………………………………………………………. 49
4.14. Multi-Plane Copy-Back Program ……………………………………………………………………………. 50
4.15. Block Erase ……………………………………………………………………………………………………….. 51
4.16. Multi Plane Block Erase ……………………………………………………………………………………….. 52
4.17. Reset ………………………………………………………………………………………………………………. 52
5. Other Features ………………………………………………………………………………………………………. 53
5.1. Data Protection & Power on/off Sequence ………………………………………………………………… 53
5.2. Ready / Busy .……………………………………………………………………………………………………… 54
5.3. Write Protect Operation ………………………………………………………………………………………… 55
6. Application notes and comments……………………………………………………………………………… 56
6.1. Paired Page Address Information…………………………………………………………………………….. 56
Rev 0.2 / Mar. 2012
5

5 Page





H27UBG8T2CTR-BC arduino
Preliminary
H27UBG8T2CTR-BC
32Gb(4096M x 8bit) Legacy MLC NAND Flash
1.7. Addressing
Bus cycle
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
1st Cycle
A0 A1 A2 A3 A4 A5 A6 A7
2nd Cycle
A8 A9 A10 A11 A12 A13 L(1) L(1)
3rd Cycle
A14 A15 A16 A17 A18 A19 A20 A21
4th Cycle
A22 A23 A24 A25 A26 A27 A28 A29
5th Cycle
A30 A31 A32 A33 L(1) L(1) L(1) L(1)
Notes:
1. L must be set to Low.
2. The device ignores any additional address input cycle than required.
3. The Address consists of column address (A0~A13), page address (A14~A21), plane address (A22),
and block address (A23~the last address).
1.8. Extended Blocks Arrangement
The device offers 44 extented blocks to increase valid blocks. These blocks can be accessed when the block
address A33 is „High‟
Row Address
(Hexadecimal)
000000h
000100h
000200h
000300h
000400h
000500h
·
·
·
07FD00h
07FE00h
07FF00h
080000h
·
·
·
082A00h
082B00h
082BFFh
Block 0
Block 1
Block 2
Block 3
Block 4
Block 5
·
·
·
Block 2045
Block 2046
Block 2047
Block 2048
Block 2049
·
·
·
Block 2090
Block 2091
Main Blocks
(2048 Blocks)
Extended Blocks
(44 Blocks)
Figure 5 : Extended Blocks Arrangement
Rev 0.2 / Mar. 2012
11

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