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NT5CC256M8BN PDF даташит

Спецификация NT5CC256M8BN изготовлена ​​​​«Nanya» и имеет функцию, называемую «2Gb DDR3 SDRAM B-Die».

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Номер произв NT5CC256M8BN
Описание 2Gb DDR3 SDRAM B-Die
Производители Nanya
логотип Nanya логотип 

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NT5CC256M8BN Даташит, Описание, Даташиты
2Gb DDR3 SDRAM B-Die
NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP
NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP
Feature
1.5V ± 0.075V / 1.35V -0.0675V/+0.1V (JEDEC
Standard Power Supply)
8 Internal memory banks (BA0- BA2)
Differential clock input (CK, )
Programmable  Latency: 6, 7, 8, 9, 10, 11
Programmable Additive Latency: 0, CL-1, CL-2
Programmable Sequential / Interleave Burst Type
Programmable Burst Length: 4, 8
8 bit prefetch architecture
Output Driver Impedance Control
Write Leveling
OCD Calibration
Dynamic ODT (Rtt_Nom & Rtt_WR)
Auto Self-Refresh
Self-Refresh Temperature
RoHS compliance and Halogen free
Packages:
78-Ball BGA for x4 & x8 components
96-Ball BGA for x16 components
Description
The 2Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing
2,147,483,648 bits. It is internally configured as an octal-bank DRAM.
The 2Gb chip is organized as 64Mbit x 4 I/O x 8 bank, 32Mbit x 8 I/O x 8 bank or 16Mbit x 16 I/O x 8 bank device. These
synchronous devices achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are
synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks
(CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source
synchronous fashion.
These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA
packages.
REV 1.1
08 / 2010
1









No Preview Available !

NT5CC256M8BN Даташит, Описание, Даташиты
2Gb DDR3 SDRAM B-Die
NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP
NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP
Pin Configuration 78 balls BGA Package (x4)
< TOP View>
See the balls through the package
1
VSS
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
2
VDD
VSSQ
DQ2
NC
VDDQ
VSS
VDD

BA0
A3
A5
3
NC
DQ0
DQS

NC



BA2
A0
A2
x4
7
A NC
B DM
C DQ1
D VDD
E NC
F CK
G 
H A10/AP
J NC
K A12/
L A1
8
VSS
VSSQ
DQ3
VSS
NC
VSS
VDD
ZQ
VERFCA
BA1
A4
VDD
VSS
A7

A9 M A11
A13 N A14
A6
A8
9
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
REV 1.1
08 / 2010
2









No Preview Available !

NT5CC256M8BN Даташит, Описание, Даташиты
2Gb DDR3 SDRAM B-Die
NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP
NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP
Pin Configuration 78 balls BGA Package (x8)
< TOP View>
See the balls through the package
12
VSS VDD
x8
37
NC A NU/
8
VSS
VSS
VSSQ
DQ0 B DM/TDQS
VSSQ
VDDQ
DQ2 DQS C DQ1
VSSQ DQ6  D VDD
DQ3
VSS
VREFDQ
NC
ODT
VDDQ
VSS
VDD
DQ4 E
 F
 G
DQ7
CK

DQ5
VSS
VDD
NC

 H A10/AP
ZQ
VSS
BA0
BA2 J
NC
VERFCA
VDD A 3
A 0 K A12/ 
BA1
VSS A 5
A2 L A1
A4
VDD A7
VSS 
A9 M A11
A13 N A14
A6
A8
9
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
REV 1.1
08 / 2010
3










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Номер в каталогеОписаниеПроизводители
NT5CC256M8BN2Gb DDR3 SDRAM B-DieNanya
Nanya

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

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