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HMT112S6TFR8C Datasheet Download - Hynix Semiconductor

Номер произв HMT112S6TFR8C
Описание 204pin DDR3 SDRAM SODIMM
Производители Hynix Semiconductor
логотип Hynix Semiconductor логотип 



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HMT112S6TFR8C Даташит, Описание, Даташиты
204pin DDR3 SDRAM SODIMM
DDR3 SDRAM
Unbuffered SODIMMs
Based on 1Gb T-die
HMT112S6TFR8C
HMT125S6TFR8C
*Hynix Semiconductor reserves the right to change products or specifications without notice.
Rev. 1.2 / Jul. 2010
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HMT112S6TFR8C Даташит, Описание, Даташиты
Revision History
Revision No.
0.1
1.0
1.1
1.2
History
Initial Release
JEDEC Update
Add supported CL5
DIMM Outline Corrected
Draft Date
Sep.2009
Nov. 2009
Jun. 2010
Jul. 2010
Remark
Preliminary
Web posting
Web posting
Web posting
Rev. 1.2 / Jul. 2010
2







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HMT112S6TFR8C Даташит, Описание, Даташиты
Description
Hynix Unbuffered Small Outline DDR3 SDRAM DIMMs (Unbuffered Small Outline Double Data Rate Syn-
chronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules
that use Hynix DDR3 SDRAM devices. These Unbuffered DDR3 SDRAM SODIMMs are intended for use as
main memory when installed in systems such as mobile personal computers.
Features
• VDD=1.5V +/- 0.075V
• VDDQ=1.5V +/- 0.075V
• VDDSPD=3.0V to 3.6V
• Functionality and operations comply with the
DDR3 SDRAM datasheet
• 8 internal banks
• Data transfer rates: PC3-10600, PC3-8500, or
PC3-6400
• Bi-directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly: BL 8 or BC
(Burst Chop) 4
• On Die Termination (ODT) supported
• RoHS compliant
* This product is in compliance with the RoHS directive.
Ordering Information
Part Number
Density Organization
HMT112S6TFR8C-G7/H9 1GB 128Mx64
HMT125S6TFR8C-G7/H9 2GB 256Mx64
Component Composition
128Mx8(H5TQ1G83TFR)*8
128Mx8(H5TQ1G83TFR)*16
# of
ranks
1
2
Rev. 1.2 / Jul. 2010
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