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Номер произв HMT325S6BFR8A
Описание 204pin DDR3 SDRAM SODIMM
Производители Hynix Semiconductor
логотип Hynix Semiconductor логотип 



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HMT325S6BFR8A Даташит, Описание, Даташиты
204pin DDR3 SDRAM SODIMM
DDR3L SDRAM
Unbuffered SODIMMs
Based on 2Gb B-die
HMT325S6BFR8A
HMT351S6BFR8A
*Hynix Semiconductor reserves the right to change products or specifications without notice.
Rev. 0.1 / Feb. 2010
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HMT325S6BFR8A Даташит, Описание, Даташиты
Revision History
Revision No.
0.1
History
Initial Release
Draft Date
Feb.2010
Remark
Preliminary
Rev. 0.1 / Feb. 2010
2







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HMT325S6BFR8A Даташит, Описание, Даташиты
Description
Hynix Unbuffered DDR3L SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line
Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3L SDRAM
devices. These Unbuffered DDR3L SDRAM DIMMs are intended for use as main memory when installed in
systems such as mobile personal computers.
Features
• Power Supply: VDD=1.35V (1.283V to 1.45V)
• VDDQ = 1.35V (1.283V to 1.45V)
• VDDSPD=3.0V to 3.6V
• Functionality and operations comply with the
DDR3 SDRAM datasheet
• 8 internal banks
• Data transfer rates: PC3-10600, PC3-8500, or
PC3-6400
• Bi-directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly: BL 8 or BC
(Burst Chop) 4
• On Die Termination (ODT) supported
• RoHS compliant
* This product is in compliance with the RoHS directive.
Ordering Information
Part Number
HMT325S6BFR8A-G7/H9
HMT351S6BFR8A-G7/H9
Density Organization
2GB 256Mx64
4GB 512Mx64
Component Composition
256Mx8(H5TC2G83BFR)*8
256Mx8(H5TC2G83BFR)*16
# of
ranks
1
2
Rev. 0.1 / Feb. 2010
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