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BC859BLT3G PDF даташит

Спецификация BC859BLT3G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «General Purpose Transistors».

Детали детали

Номер произв BC859BLT3G
Описание General Purpose Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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BC859BLT3G Даташит, Описание, Даташиты
BC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
VCEO
−65
−45
−30
V
Collector-Base Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
VCBO
−80
−50
−30
V
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
VEBO
IC
IC
−5.0
−100
−200
V
mAdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
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1
BASE
COLLECTOR
3
2
EMITTER
3
1
2
SOT−23 (TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
xx M G
G
1
xx = Device Code
xx = (Refer to page 6)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 14
1
Publication Order Number:
BC856ALT1/D









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BC859BLT3G Даташит, Описание, Даташиты
BC856ALT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
BC856, SBC856 Series
(IC = −10 mA)
BC857, SBC857 Series
BC858, NSBVC858 BC859 Series
V(BR)CEO
Collector −Emitter Breakdown Voltage
BC856 S, SBC856eries
(IC = −10 mA, VEB = 0) BC857A, SBC857A, BC857B, SBC857B Only
BC858, NSVB858, BC859 Series
V(BR)CES
Collector −Base Breakdown Voltage
BC856, SBC856 Series
(IC = −10 mA)
BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
V(BR)EBO
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ICBO
ON CHARACTERISTICS
DC Current Gain
BC856A, SBC856A, BC857A, SBC857A, BC858A
(IC = −10 mA, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B,
BC858B, NSVBC858B
BC857C, SBC857C BC858C
hFE
(IC = −2.0 mA, VCE = −5.0 V)
BC856A, SBC856A, BC857A,
SBC857A, BC858A
BC856B, SBC856B, BC857B, SBC857B, BC858B,
NSVBC858B, BC859B
BC857C, SBC857C, BC858C, BC859C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series
BC859 Series
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
Min
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
125
220
420
−0.6
100
Typ Max Unit
− −V
−−
−−
− −V
−−
−−
− −V
−−
−−
− −V
−−
−−
− −15 nA
− −4.0 mA
90 −
150 −
270 −
180 250
290 475
520 800
− −0.3
− −0.65
−0.7 −
−0.9 −
− −0.75
− −0.82
V
V
V
− − MHz
− 4.5 pF
dB
− 10
− 4.0
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BC859BLT3G Даташит, Описание, Даташиты
BC856ALT1G Series
BC857/BC858/BC859/SBC857/NSVBC858
2.0
1.5 VCE = -10 V
TA = 25°C
1.0
0.7
0.5
0.3
0.2
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
-1.0
-0.9 TA = 25°C
-0.8
VBE(sat) @ IC/IB = 10
-0.7
-0.6 VBE(on) @ VCE = -10 V
-0.5
-0.4
-0.3
-0.2
-0.1 VCE(sat) @ IC/IB = 10
0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
IC, COLLECTOR CURRENT (mAdc)
-50 -100
Figure 2. “Saturation” and “On” Voltages
-2.0
TA = 25°C
-1.6
-1.2
-0.8 IC =
-10 mA
-0.4
IC = -50 mA
IC = -20 mA
IC = -200 mA
IC = -100 mA
0
-0.02
-0.1 -1.0
IB, BASE CURRENT (mA)
-10 -20
Figure 3. Collector Saturation Region
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-0.2 -1.0
-10
IC, COLLECTOR CURRENT (mA)
-100
Figure 4. Base−Emitter Temperature Coefficient
10
Cib
7.0
TA = 25°C
5.0
3.0 Cob
2.0
1.0
-0.4 -0.6
-1.0 -2.0 -4.0 -6.0 -10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
-20 -30 -40
400
300
200
150 VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0 -2.0 -3.0 -5.0
-10 -20 -30 -50
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current−Gain − Bandwidth Product
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Номер в каталогеОписаниеПроизводители
BC859BLT3General Purpose TransistorsON Semiconductor
ON Semiconductor
BC859BLT3General Purpose TransistorsON Semiconductor
ON Semiconductor
BC859BLT3GGeneral Purpose TransistorsON Semiconductor
ON Semiconductor

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