NUF8152 PDF даташит
Спецификация NUF8152 изготовлена «ON Semiconductor» и имеет функцию, называемую «8-Channel EMI Filter». |
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Детали детали
Номер произв | NUF8152 |
Описание | 8-Channel EMI Filter |
Производители | ON Semiconductor |
логотип |
6 Pages
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NUF8152, SZNUF8152
8-Channel EMI Filter with
Integrated ESD Protection
The NUF8152MU is a eight−channel (C−L−R−C) Pi−style EMI
filter array with integrated ESD protection. Its typical component
values of R = 28 W, C = 17 pF and L = 1.0 nH deliver a cutoff
frequency of 125 MHz and stop band attenuation greater than −25 dB
from 800 MHz to 3.0 GHz.
This performance makes the part ideal for parallel interfaces with
data rates up to 83 Mbps in applications where wireless interference
must be minimized. The specified attenuation range is very effective
in minimizing interference from 2G/3G, GPS, Bluetooth® and
WLAN signals.
The NUF8152MU is available in the low−profile 16−lead 1.2 mm x
3.5 mm x 0.5 mm UDFN16 surface mount package.
Features/Benefits
• ±13 kV ESD Protection on each channel (IEC61000−4−2 Level 4,
Contact Discharge)
• R/C Values of 28 W and 17 pF and L = 1.0 nH Deliver Exceptional
S21 Performance Characteristics of 125 MHz f3dB and −25 dB Stop
Band Attenuation from 800 MHz to 3.0 GHz
• Integrated EMI/ESD System Solution in UDFN Package Offers
Exceptional Cost, System Reliability and Space Savings
• AEC−Q101 Qualified and PPAP Capable − SZNUF8152
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These are Pb−Free Devices
Applications
• EMI Filtering for LCD and Camera Data Lines
• EMI Filtering and Protection for I/O Ports and Keypads
http://onsemi.com
16
1
UDFN16
CASE 517AF
MARKING
DIAGRAM
815 M
G
1
815 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NUF8152MUT2G
UDFN16 3000 / Tape &
(Pb−Free)
Reel
SZNUF8152MUT2G UDFN16 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Filter + ESDn
L = 1 nH R = 28 W
Cd = 17 pF Cd = 17 pF
Filter + ESDn
See Table 1 for pin description
Figure 1. Electrical Schematic
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
1.0E + 6
10.0E + 6 100.0E + 6 1.0E + 9 10.0E + 9
FREQUENCY (Hz)
Figure 2. Typical Insertion Loss Characteristics
(S21 Measurement)
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 0
1
Publication Order Number:
NUF8152/D
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NUF8152, SZNUF8152
Table 1. FUNCTIONAL PIN DESCRIPTION
Filter
Device Pins
Filter 1
1 & 16
Filter 2
2 & 15
Filter 3
3 & 14
Filter 4
4 & 13
Filter 5
5 & 12
Filter 6
6 & 11
Filter 7
7 & 10
Filter 8
8&9
Ground Pad
GND
Filter + ESD Channel 1
Filter + ESD Channel 2
Filter + ESD Channel 3
Filter + ESD Channel 4
Filter + ESD Channel 5
Filter + ESD Channel 6
Filter + ESD Channel 7
Filter + ESD Channel 8
Ground
Description
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
Contact Discharge
VPP
13 kV
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Maximum Reverse Working Voltage
Breakdown Voltage
Leakage Current
Inductance
VRWM
VBR
IR
L
IR = 1.0 mA
VRWM = 3.3 V
5.0 V
6.0 7.0 8.0 V
100 nA
1.0 3.0 nH
Resistance
Diode Capacitance
Line Capacitance
3 dB Cut−Off Frequency (Note 1)
RA
Cd VR = 2.5 V, f = 1.0 MHz
CL VR = 2.5 V, f = 1.0 MHz
f3dB Above this frequency,
appreciable attenuation occurs
28 36 W
17 pF
34 pF
125 MHz
6 dB Cut−Off Frequency
f6dB
Above this frequency,
appreciable attenuation occurs
210
MHz
1. 50 W source and 50 W load termination.
http://onsemi.com
2
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NUF8152, SZNUF8152
TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified)
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
1.0E + 6
10.0E + 6 100.0E + 6 1.0E + 9 10.0E + 9
FREQUENCY (Hz)
Figure 1. Typical Insertion Loss Characteristics
(S21 Measurement)
0
-10
-20
-30
-40
-50
-60
-70
1.0E + 6
1.0E + 7
1.0E +8
1.0E + 9 1.0E + 10
FREQUENCY (Hz)
Figure 2. Analog Crosstalk Curve
(S41 Measurement)
32
31
30
29
28
27
26
-40 -20
0
20
40 60 80 100
TEMPERATURE (_C)
Figure 3. Typical Resistance Over Temperature
2
1.5
1
0.5
0
01
23
45
REVERSE BIASED VOLTAGE (V)
Figure 4. Typical Line Capacitance vs. Reverse
Bias Voltage (Normalized to Capacitance @ 2.5 V)
http://onsemi.com
3
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Номер в каталоге | Описание | Производители |
NUF8152 | 8-Channel EMI Filter | ON Semiconductor |
NUF8152MUT2G | 8-Channel EMI Filter | ON Semiconductor |
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