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даташит 2D0N60F PDF ( Datasheet )

2D0N60F Datasheet Download - KEC

Номер произв 2D0N60F
Описание KHB2D0N60F
Производители KEC
логотип KEC логотип 

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2D0N60F Даташит, Описание, Даташиты
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
VDSS= 600V, ID= 2.0A
Drain-Source ON Resistance :
RDS(ON)=5.0 @VGS = 10V
Qg(typ.) = 10.9nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KHB2D0N60F UNIT
KHB2D0N60P
KHB2D0N60F2
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600 V
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
2.0 2.0*
1.2 1.2*
8.0 8.0*
120
5.4
5.5
54 23
0.43 0.18
150
-55 150
A
mJ
mJ
V/ns
W
W/
Thermal Resistance, Junction-to-Case RthJC
2.32
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
5.5 /W
- /W
62.5 /W
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB2D0N60P/F/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB2D0N60P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB2D0N60F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB2D0N60F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7







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2D0N60F Даташит, Описание, Даташиты
KHB2D0N60P/F/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=600V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.0A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Crss
Coss
VDS=480V, ID=2.0A
VGS=10V
(Note4,5)
VDD=300V
RL=150
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD IS=2.0A, VGS=0V
trr IS=2.0A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 36.9mH, IS= 2.0A, VDD=50V, RG=25 , Starting Tj = 25 .
Note 3) IS 2.0A, dI/dt 300A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
600 - - V
- 0.65 - V/
- - 10 A
2.0 - 4.0 V
- - 100 nA
- 3.8 5.0
- 10.9 12
- 1.7 3 nC
- 5.0 5.5
- - 28
- - 60
ns
- - 58
- - 66
- 388 504
-
6.5 8.5
pF
- 46 59.4
- - 2.0
A
- - 8.0
- - 1.5 V
- 300 -
ns
- 1.55 -
C
2007. 5. 10
Revision No : 0
2/7







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2D0N60F Даташит, Описание, Даташиты
KHB2D0N60P/F/F2
101
VGS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
100 5.5 V
5.0 V
Bottom : 4.5V
Fig1. ID - VDS
10-1
10-2
10-1
100 101
Drain - Source Voltage VDS (V)
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
101
100
10-1
0.2
150 C 25 C
0.4 0.6 0.8 1.0 1.2 1.4
Source - Drain Voltage VSD (V)
1.6
2007. 5. 10
Revision No : 0
Fig2. ID - VGS
100
150 C
25 C
-55 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
12
10
8
VGS = 10V
6 VGS = 20V
4
2
0
012345
Drain Current ID (A)
Fig6. RDS(ON) - Tj
2.5
VGS = 10V
IDS = 2.0A
2.0
1.5
1.0
0.5
0.0
-100
-50 0
50 100
Junction Temperture Tj ( C)
150
3/7










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