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2N6168 PDF даташит

Спецификация 2N6168 изготовлена ​​​​«NJ Semi-Conductor» и имеет функцию, называемую «Silicon Controlled Rectifier».

Детали детали

Номер произв 2N6168
Описание Silicon Controlled Rectifier
Производители NJ Semi-Conductor
логотип NJ Semi-Conductor логотип 

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2N6168 Даташит, Описание, Даташиты
Jsii.su
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N6167
thru
2N6170
SCRs
20 AMPERES RMS
100 thru 600 VOLTS
Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor
... designed for industrial and consumer applications .such as power supplies;
battery chargers; temperature, motor, light and welder controls.
• Economical for a Wide Range of Uses
• High Surge Current —IJSM = 240 Amps
• Rugged Construction in Isolated Stud Package
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
•Peak Repetitive Forward and Reverse Blocking Voltage (1)
(Tj = -4<TClo +100 C)
2N6167
2N6168
2N6169
2N6170
VDRM
or
VRRM
100
200
400
600
Volts
•Non-Repetitive Peak Reverse Blocking Voltage
It s 5 ms|
2N6167
2N616S
2N6169
2N6170
VRSM
150
250
450
650
Volts
"Average Forward Current
<TC = - 4 0 to +66'C)
( + 85'C)
ITIAVJ
Amps
13
6.5
•Peak Surge Current
(One cycle, 60 Hz) (Tc = + 65'CI
(1.5ms pulse <S Tj = 100°CI
Preceded and followed by no current or Voltage
ITSM
Amps
240
560
Circuit Fusing
(Tj = -40 to + 100°C) (t = 1 to 8.3 ms)
|2t 235 A^s
"Peak Gate Power
PGM 5 Watts
•Average Gate Power
PG(AV)
0.5
Watt
•Indicates JEDEC Registered Data.
Icon!.)
II) Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias appliedto the gate concurrently with a negative potential on
the anode. Devices should not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied
exceeds the rated blocking voltage.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information rumished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors









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2N6168 Даташит, Описание, Даташиты
MAXIMUM RATINGS — continued
Rating
"Peak Forward Gate Current
•Operating Junction Temperature Range
•Storage Temperature Range
•Stud Torque
•THERMAL CHARACTERISTICS
Ch*r»cteri«tlc
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
•Peak Forward or Reverse Blocking Current
(Rated VrjRM or VRRM, gate open. TC = 100°C)
2N6167
2N6168
2N6169
2N6170
(Rated VQRM or VRRM. gate open, TC = 25°C)
All Devices
"Peak Forward "On" Voltage
(ITM = 41 A Peak)
Gate Trigger Current, Continuous dc
(Vo - 12V, RL = 240)
*Tc = -4Q°C
TC = 25°C
Gate Trigger Voltage, Continuous dc
(VD = 12 v. RL = 24 ni
*TC =• -40"C
TC = 25°c
Holding Current
(Vo = 12 V, gate open, IT = 200 mA)
*TC = -40°C
TC = 25°C
•Turn-On Time (t(j + tr)
(ITM = 41 Adc, VQ = Rated VDRM-
IQT = 200 mAdc. Rise Time s 0.05 MS, Pulse Width = 10 MS)
Turn-Off Time
(ITM = 10A. I R = 10 A)
(ITM = 10 A, IR = 10 A, Tj = 100°C)
Forward Voltage Application Rate
(Tj = 100°C, VD = Rated VDRM>
•Indicates JEDEC Registered Data.
Symbol
'GFM
Tj
Tstg
Value
2
-40 to +100
-40 to+150
30
Unit
Amps
°C
°C
in. Ib.
Symbol
"we
Max
1.5
Unit
°C/W
Symbol
!DRM. IRRM
VTM
IGT
VGT
IH
'on
Mln Typ. MM Unit
mA
12
- 1 2.5
i3
i4
10 MA
1.5 1.7 Volts
75 mA
2.1 40
0.8 2.5 Volts
0.63 1.6
90 mA
3.5 50
" " 1 MS
'off
dvdt
MS
25
40
50 — V/MS
.090
^275
14!
20.0 AMP and 25.0AMP
</>" ISOLATED STUD MOUNT
ALL DIMENSIONS IN INCHES










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