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даташит 2SB1531 PDF ( Datasheet )

2SB1531 Datasheet Download - Panasonic

Номер произв 2SB1531
Описание Power Transistors
Производители Panasonic
логотип Panasonic логотип 

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2SB1531 Даташит, Описание, Даташиты
Power Transistors
2SB1531
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2340
s Features
q Optimum for 40W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): < –2.5V
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–130
–110
–5
–10
–6
50
2.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
15.0±0.5
13.0±0.5
10.5±0.5
Unit: mm
4.5±0.2
2.0±0.1
φ3.2±0.1
2.0±0.2
1.1±0.1
1.4±0.3
5.45±0.3
10.9±0.5
0.6±0.2
123
1:Base
2:Collector
3:Emitter
EIAJ:SC–65(a)
TOP–3 Package(a)
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = –130V, IE = 0
VCE = –110V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –5A
IC = –5A, IB = –5mA
IC = –5A, IB = –5mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –5A, IB1 = –5mA, IB2 = 5mA,
VCC = –50V
min
–110
2000
5000
E
typ max Unit
–100 µA
–100 µA
–100 µA
V
30000
–2.5 V
–3.0 V
20 MHz
0.9 µs
2.5 µs
1.7 µs
*hFE2 Rank classification
Rank
Q
S
P
hFE2 5000 to 15000 7000 to 21000 8000 to 30000
1







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2SB1531 Даташит, Описание, Даташиты
Power Transistors
PC — Ta
80
70
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
60 (3) Without heat sink
(PC=2.5W)
50
40
(1)
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–12
TC=25˚C
–10 IB=–5mA
–8 –1mA
– 0.9mA
– 0.8mA
–6 – 0.7mA
– 0.6mA
– 0.5mA
–4 – 0.4mA
– 0.3mA
–2 – 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1531
–100
–30
–10
–3
–1
VCE(sat) — IC
IC/IB=1000
TC=100˚C
25˚C
–25˚C
– 0.3
– 0.1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
–100
–30
–10
VBE(sat) — IC
IC/IB=1000
–3 TC=–25˚C
–1
100˚C
25˚C
– 0.3
– 0.1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
hFE — IC
105
VCE=5V
TC=100˚C
25˚C
104
–25˚C
103
102
10
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
–1 –3
–10 –30 –100
Collector to base voltage VCB (V)
100
30
10
3 tstg
1 tf
ton
0.3
ton, tstg, tf — IC
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000
(–IB1=IB2)
VCC=–50V
TC=25˚C
0.1
0.03
0.01
0
–4 –8 –12 –16
Collector current IC (A)
Area of safe operation (ASO)
–100
–30
–10 ICP
IC
–3
10ms
Non repetitive pulse
TC=25˚C
t=1ms
–1 DC
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2







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2SB1531 Даташит, Описание, Даташиты
Power Transistors
Rth(t) — t
104
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
103
102
(1)
10 (2)
1
10–1
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
2SB1531
3










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