HER103G PDF даташит
Спецификация HER103G изготовлена «American First Semiconductor» и имеет функцию, называемую «(HER101G - HER108G) 1.0A Leaded Type High Effciency Rectifiers». |
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Детали детали
Номер произв | HER103G |
Описание | (HER101G - HER108G) 1.0A Leaded Type High Effciency Rectifiers |
Производители | American First Semiconductor |
логотип |
2 Pages
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Silicon Rectifier
HER101G THRU HER108G
1.0A Leaded Type High
Effciency Rectifiers - 50V-1000V
Features
• Axial lead type devices for through hole design.
• High current capability.
• Ultrafast recovery time for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen free parts, ex. HER101G-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, DO-41
• Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity: Color band denotes cathode end
• Mounting Position : Any
• Weight : Approximated 0.33 gram
Package outline
DO-41
.107(2.7)
.080(2.0)
DIA.
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 50OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 1.0 A
IFSM 30 A
5.0
IR
μA
150
CJ 20 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
HER101G
HER102G
HER103G
HER104G
HER105G
HER106G
50
100
200
300
400
600
35 50
70 100
140 200
210 300
280 400
420 600
1.00
1.30
50
HER107G
HER108G
800
1000
560
700
800
1000
1.85
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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HER101G THRU HER108G
Rating and characteristic curves
FIG.1- TY PICAL INSTANEOUS FORWARD
CHARACTERISTICS
10
TJ=25°C
1.0
0.1
0.01
0.001
0.4 0.6 0.8 1.0
pulse width =300μs
1% duty cycle
1.2 1.4 1.6 1.8 2.0
INSTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
trr
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-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
24
18
TJ=25 C
8.3ms Single Half
12 Sine Wave
JEDEC method
6
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
175
120
100
80
60
40
20
0
.01
.05 .1
.5 1
5
REVERSE VOLTAGE,(V)
10
50 100
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