|
|
PDF HER108G Data sheet ( Hoja de datos )
| Número de pieza | HER108G | |
| Descripción | (HER101G - HER108G) 1.0A Leaded Type High Effciency Rectifiers | |
| Fabricantes | American First Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HER108G (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Silicon Rectifier
HER101G THRU HER108G
1.0A Leaded Type High
Effciency Rectifiers - 50V-1000V
Features
• Axial lead type devices for through hole design.
• High current capability.
• Ultrafast recovery time for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen free parts, ex. HER101G-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, DO-41
• Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity: Color band denotes cathode end
• Mounting Position : Any
• Weight : Approximated 0.33 gram
Package outline
DO-41
.107(2.7)
.080(2.0)
DIA.
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 50OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 1.0 A
IFSM 30 A
5.0
IR
μA
150
CJ 20 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
HER101G
HER102G
HER103G
HER104G
HER105G
HER106G
50
100
200
300
400
600
35 50
70 100
140 200
210 300
280 400
420 600
1.00
1.30
50
HER107G
HER108G
800
1000
560
700
800
1000
1.85
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
Page 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HER108G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HER108 | 1.0A HIGH EFFICIENCY RECTIFIER |  Won-Top Electronics |
| HER108 | 1.0 Amp High Efficient Rectifiers 50 to 1000 Volts |  Micro Commercial Components |
| HER108 | 1A HIGH EFFICIENCY GPP DIODES |  Leshan Radio Company |
| HER108 | HIGH EFFICIENCY RECTIFIERS(1.0A/600-1000V) |  Mospec Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |