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HER304G PDF даташит

Спецификация HER304G изготовлена ​​​​«American First Semiconductor» и имеет функцию, называемую «(HER301G - HER308G) 3.0A Leaded Type High Effciency Rectifiers».

Детали детали

Номер произв HER304G
Описание (HER301G - HER308G) 3.0A Leaded Type High Effciency Rectifiers
Производители American First Semiconductor
логотип American First Semiconductor логотип 

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HER304G Даташит, Описание, Даташиты
Silicon Rectifier
3.0A Leaded Type High
Effciency Rectifiers - 50V-1000V
Features
Axial lead type devices for through hole design.
High current capability.
Ultrafast recovery time for high efficiency.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen free parts, ex. HER301G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-201AD
Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 1.10 gram
HER301G THRU HER308G
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 50OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 3.0 A
IFSM 150 A
5.0
IR
μA
100
CJ 75 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
HER301G
HER302G
HER303G
HER304G
HER305G
HER306G
50
100
200
300
400
600
35 50
70 100
140 200
210 300
280 400
420 600
1.00
1.30
50
HER307G
HER308G
800
1000
560
700
800
1000
1.85
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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HER304G Даташит, Описание, Даташиты
HER301G THRU HER308G
Rating and characteristic curves
Fig.1 - Forward Current Derating Curve
3.0
2.5
2.0
1.5
1.0
0.5
single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150
Ambient Temperature, TA ( °C)
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
200
8.3mS single half sine-wave
(JEDEC Method)
150
100
50
0
12
5 10 20
50 100
Number of Cycles at 60 Hz
Fig. 3 - Typical Instantaneour Forward
Characteristics
100
T J= 2 5°C HER301G-HER304G
HER306G-HER308G
10
HER305G
1.0
0.1
0.4 0.6 0.8
p u l s e w i d t h = 3 0 0μS
1% duty cycle
1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage, VF (Volts)
Fig. 4 - Typical Reverse Characteristics
1000
TJ=125°C
100
10
TJ=25°C
1.0
0.1
0 20 40 60 80 100
Percent of Rated Peak Reverse Voltage ( %)
Fig. 5 - Typical Junction Capacitance
1000
HER301G-HER305G
100
10 HER306G-HER308G
1
0.1 1.0
TJ=25°C
f=1.0MHz
Vsig=50mVp-p
10 100
Reverse Voltage, VR (Volts)
Fig. 6 - Test Circuit Diagram and Reverse
Recovery Time Characteristic
50Ω
noninductive
10Ω
noninductive
Trr
0.5A
+
25Vdc
(approx)
-
1Ω
non
inductive
-
pulse
generator
(note 2)
oscilloscope
(note 1)
+
0
-0.25A
-1.0A
0
5 10 15 20 25 30
time, t(nS)
Note: 1. rise time=7nS Max. input impedance=1MΩ, 22pF
2. rise time=10nS Max. source impedance=80Ω
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