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HER508G PDF даташит

Спецификация HER508G изготовлена ​​​​«American First Semiconductor» и имеет функцию, называемую «(HER501G - HER508G) 5.0A Leaded Type Fast Recovery Effciency Rectifiers».

Детали детали

Номер произв HER508G
Описание (HER501G - HER508G) 5.0A Leaded Type Fast Recovery Effciency Rectifiers
Производители American First Semiconductor
логотип American First Semiconductor логотип 

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HER508G Даташит, Описание, Даташиты
Silicon Rectifier
HER501G THRU HER508G
5.0A Leaded Type Fast Recovery
Effciency Rectifiers-50V-1000V
Features
Axial lead type devices for through hole design.
5.0A operating at TA=55°C without thermal run away
High current capability.
Ultrafast recovery time for high efficiency.
High surge capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen free parts, ex. HER501G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-201AD
Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 1.10 gram
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 50OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 5.0 A
IFSM 200 A
5.0
IR
μA
100
CJ 75 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
RM
*
S
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
R
*
R
5
(nS)
HER501G
HER502G
HER503G
HER504G
HER505G
HER506G
50
100
200
300
400
600
35 50
70 100
140 200
210 300
280 400
420 600
1.00
1.30
50
HER507G
HER508G
800
1000
560
700
800
1000
1.85
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=5.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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HER508G Даташит, Описание, Даташиты
HER501G THRU HER508G
Rating and characteristic curves
Fig.1 - Forward Current Derating Curve
6.0
5.0
4.0
3.0
2.0
1.0
single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150
Ambient Temperature, TA ( OC)
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
200
8.3mS single half sine-wave
(JEDEC Method)
150
100
50
0
12
5 10 20
50 100
Number of Cycles at 60 Hz
Fig. 3 - Typical Instantaneour Forward
Characteristics
100
TJ=25OC
HER505G
10
HER501G-HER504G
1.0 HER506G-HER508G
0.1
0.4 0.6 0.8
pulse width =300μS
1% duty cycle
1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage, VF (Volts)
Fig. 4 - Typical Reverse Characteristics
1000
TJ=125OC
100
10
TJ=25OC
1.0
0.1
0 20 40 60 80 100
Percent of Rated Peak Reverse Voltage ( %)
Fig. 5 - Typical Junction Capacitance
1000
HER501G-HER505G
100
HER506G-HER508G
10
0.1
TJ=25°C
f=1.0MHz
Vsig=50mVp-p
1.0 10
100
Reverse Voltage, VR (Volts)
Fig. 6 - Test Circuit Diagram and Reverse
Recovery Time Characteristic
50Ω
noninductive
10Ω
noninductive
Trr
0.5A
+
25Vdc
(approx)
-
1Ω
non
inductive
-
pulse
generator
(note 2)
oscilloscope
(note 1)
+
0
-0.25A
-1.0A
0
5 10 15 20 25 30
time, t(nS)
Note: 1. rise time=7nS Max. input impedance=1MΩ, 22pF
2. rise time=10nS Max. source impedance=80Ω
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