C2750 PDF даташит
Спецификация C2750 изготовлена «INCHANGE» и имеет функцию, называемую «Silicon NPN Power Transistor». |
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Детали детали
Номер произв | C2750 |
Описание | Silicon NPN Power Transistor |
Производители | INCHANGE |
логотип |
2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2750
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
·High Current Capability
·High Power Dissipation
APPLICATIONS
·Designed for high speed, high current switching industrial
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 15 A
ICM Collector Current-Peak
30 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
5A
100 W
150 ℃
-55~150
℃
isc website:www.iscsemi.cn
1
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2750
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10A; IB1= 1A; L= 100μH
VCEX(SUS)1
Collector-Emitter Sustaining Voltage
IC= 10A; IB1= -IB= 1A; Ta= 125℃
L= 180μH; Clamped
VCEX(SUS)2
Collector-Emitter Sustaining Voltage
IC= 20A; IB1= 2A; IB2= 1A;
Ta= 125℃; L= 180μH; Clamped
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
100
150
100
V
V
V
0.6 V
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current
IC= 10A; IB= 1A
VCB= 100V; IE= 0
1.5 V
10 μA
ICER Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 100V; RBE= 50Ω; Ta= 125℃
VCE= 100V;VBE(off)= -1.5V;
VCE= 100V;VBE(off)= -1.5V;Ta=125℃
VEB= 5V; IC= 0
1.0 mA
10
500
μA
10 μA
hFE-1
DC Current Gain
IC= 5A; VCE= 5V
30 120
hFE-2
DC Current Gain
IC= 10A; VCE= 5V
20
Switching Times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= 10A, IB1= -IB2= 1A,
VCC≈ 50V; RL= 5Ω
1.0 μs
1.5 μs
0.3 μs
hFE-1 Classifications
ML K
30-60 40-80 60-120
isc website:www.iscsemi.cn
2
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Номер в каталоге | Описание | Производители |
C2750 | Silicon NPN Power Transistor | INCHANGE |
C2751 | NPN Transistor - 2SC2751 | Savant |
C2752 | NPN Transistor - 2SC2752 | SavantIC |
C2753 | NPN Transistor - 2SC2753 | Toshiba |
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DataSheet26.com | 2020 | Контакты | Поиск |