DataSheet26.com

C2750 PDF даташит

Спецификация C2750 изготовлена ​​​​«INCHANGE» и имеет функцию, называемую «Silicon NPN Power Transistor».

Детали детали

Номер произв C2750
Описание Silicon NPN Power Transistor
Производители INCHANGE
логотип INCHANGE логотип 

2 Pages
scroll

No Preview Available !

C2750 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2750
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
·High Current Capability
·High Power Dissipation
APPLICATIONS
·Designed for high speed, high current switching industrial
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 15 A
ICM Collector Current-Peak
30 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
5A
100 W
150
-55~150
isc websitewww.iscsemi.cn
1









No Preview Available !

C2750 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2750
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10A; IB1= 1A; L= 100μH
VCEX(SUS)1
Collector-Emitter Sustaining Voltage
IC= 10A; IB1= -IB= 1A; Ta= 125
L= 180μH; Clamped
VCEX(SUS)2
Collector-Emitter Sustaining Voltage
IC= 20A; IB1= 2A; IB2= 1A;
Ta= 125; L= 180μH; Clamped
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
100
150
100
V
V
V
0.6 V
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current
IC= 10A; IB= 1A
VCB= 100V; IE= 0
1.5 V
10 μA
ICER Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 100V; RBE= 50Ω; Ta= 125
VCE= 100V;VBE(off)= -1.5V;
VCE= 100V;VBE(off)= -1.5V;Ta=125
VEB= 5V; IC= 0
1.0 mA
10
500
μA
10 μA
hFE-1
DC Current Gain
IC= 5A; VCE= 5V
30 120
hFE-2
DC Current Gain
IC= 10A; VCE= 5V
20
Switching Times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= 10A, IB1= -IB2= 1A,
VCC50V; RL= 5Ω
1.0 μs
1.5 μs
0.3 μs
hFE-1 Classifications
ML K
30-60 40-80 60-120
isc websitewww.iscsemi.cn
2










Скачать PDF:

[ C2750.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C2750Silicon NPN Power TransistorINCHANGE
INCHANGE
C2751NPN Transistor - 2SC2751Savant
Savant
C2752NPN Transistor - 2SC2752SavantIC
SavantIC
C2753NPN Transistor - 2SC2753Toshiba
Toshiba

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск