SD211DE PDF даташит
Спецификация SD211DE изготовлена «Linear Integrated Systems» и имеет функцию, называемую «N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED». |
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Детали детали
Номер произв | SD211DE |
Описание | N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED |
Производители | Linear Integrated Systems |
логотип |
3 Pages
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SD-SST211/213/215
N-CHANNEL LATERAL
DMOS SWITCH
ZENER PROTECTED
PRODUCT SUMMARY
PART NUMBER
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
V(BR)DS Min (V)
30
10
20
30
10
20
V(GS)th Max (V)
1.5
1.5
1.5
1.5
1.5
1.5
rDS(on) Max (Ω)
45 @ VGS=10V
45 @ VGS=10V
45 @ VGS=10V
50 @ VGS=10V
50 @ VGS=10V
50 @ VGS=10V
C rss Max (pF)
0.5
0.5
0.5
0.5
0.5
0.5
tON Max (ns)
2
2
2
2
2
2
Features
• Ultra-High Speed Switching—ION: 1ns
• Ultra-Low Reverse Capacitance: 0.2pF
• Low Guaranteed rDS @5V
• Low Turn-On Threshold Voltage
• N-Channel Enhancement Mode
Benefits
• High-Speed System Performance
• Low Insertion Loss at High Frequencies
• Low Transfer Signal Loss
• Simple Driver Requirement
• Single Supply Operation
Applications
• Fast Analog Switch
• Fast Sample-and-Holds
• Pixel-Rate Switching
• DAC Deglitchers
• High-Speed Driver
Description
The SD211DE/SST211 series consists of enhancement-mode
MOSFETs designed for high speed low-glitch switching in audio,
video and high-frequency applications. The SD211 may be used for a
±5-V analog switching or as a high speed driver of the SD214.
The SD214 is normally used for ±10-V analog switching.
These MOSFETs utilize lateral construction to achieve low
capacitance and ultra-fast switching speeds. An integrated ZENER
diode provides ESD protection. These devices feature a poly-silicon
gate for manufacturing reliability.
For similar products see: quad array—SD5000/5400 series, non-
Zener protection—SD210DE/214DE.
TO-206AF
(TO-72)
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 20114 06/19/13 Rev#A8 ECN# SD-SST211/213/215
No Preview Available ! |
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Gate Drain, Gate Source Voltage
Gate-Substrate Voltagea
Drain-Source Voltage
Voltage
(SD211DE/SST211) . . . . . . .-30/25V
(SD213DE/SST213). . . . . . . -15/25V
(SD215DE/SST215). . . . . . . -25/30V
(SD211DE/SST211) . . . . . . .-0.3/25V
(SD213DE/SST213) . . . . . . .-0.3/25V
(SD215DE/SST215) . . . . . . .-0.3/30V
(SD211DE/SST211) . . . . . . . .30V
(SD213DE/SST213) . . . . . . . .10V
(SD215DE/SST215) . . . . . . . .20V
(SD211DE/SST211) . . . . . . . .10V
(SD213DE/SST213) . . . . . . . .10V
(SD215DE/SST215) . . . . . . . .20V
Drain-Substrate Voltage
Source-Substrate Voltage
Drain Current
Lead Temperature (1/16” from ease for 10 seconds)
Storage Temperature
Operating Junction Temperature
Power Dissipation
(SD211DE/SST211) . . . . . . . .30V
(SD213DE/SST213) . . . . . . . .15V
(SD215DE/SST215) . . . . . . . .25V
(SD211DE/SST211) . . . . . . . .15V
(SD213DE/SST213) . . . . . . . .15V
(SD215DE/SST215) . . . . . . . .25V
. . . . . . . . . . . . . . . . . . . . . . . .50mA
. . . . . . . . . . . . . . . . . . . . . . . 300°C
. . . . . . . . . . . . . . . . . -65 to 150°C
. . . . . . . . . . . . . . . . . -55 to 125°C
. . . . . . . . . . . . . . . . . . . . . . .300mW
Notes:
a. Derate 3mW/°C above 25°C
Specificationsa
PARAMETER SYMBOLb
Static
Drain - Source
Breakdown Voltage
Source - Drain
Breakdown Voltage
Drain - Substrate
Breakdown Voltage
Source - Substrate
Breakdown Voltage
Drain – Source
Leakage
Source - Drain
Leakage
Gate Leakage
Threshold Voltage
V(BR)DS
V(BR)SD
V(BR)DBO
V(BR)SBO
IDS(off)
ISD(off)
IGBS
VGS(th)
Drain – Source
On-Resistance
rDS(on)
TEST CONDITIONSb
VGS = VBS = 0V, ID = 10 µA
VGS = VBS = -5V, ID = 10 nA
VGS = VBD = -5V, IS = 10 nA
VGB = 0V, ID= 10 nA
Source Open
VGB = 0V, Is = 10 µA
Drain Open
VGS = VBS = -5V
VGD = VBD = -5V
VDS = 10V
VDS = 20V
VSD = 10V
VSD = 20V
VDB = VSB = 0V, VGB = 30V
VDS = VGS, ID = 1 µA ,
VSB = 0V
VGS = 5V
(SD Series)
VGS = 5V
(SST Series)
VSB = 0V
ID = 1mA
VGS = 10V
(SD Series)
VGS = 10V
(SST Series)
VGS = 15V
VGS = 20V
VGS = 25V
TYPb
LIMITS
211 Series 213 Series 215 Series
Min Max Min Max Min Max
35 30
30 10 10 20
22 10 10 20
35 15 15 25
35 15 15 25
0.4 10 10
0.9 10
0.5 10 10
10
0.01 100 100 100
0.8 0.5 1.5 0.1 1.5 0.1 1.5
58 70 70 70
60 75 75 75
38 45 45 45
40 50 50 50
30
26
24
UNIT
V
nA
V
Ω
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 20114 06/19/13 Rev#A8 ECN# SD-SST211/213/215
No Preview Available ! |
Specificationsa
PARAMETER SYMBOLb
TEST CONDITIONSb
TYPc
Dynamic
Forward
Transconductance
Gate Node
Capacitance
Drain Node
Capacitance
Source Node
Capacitance
Reverse Transfer
Capacitance
Switching
Turn-On Time
Turn-Off Time
gfs VDS = 10V, VSB
= 0V, ,
gos ID = 20mA, f =
1kHz
C(GS+GD+GB)
SD Series
SST Series
All
C(GD+DB)
C(GS+SB)
Crss
VDS = 10V, f =
1MHz
VGS = VBS = -
15V
SD Series
SST Series
SD Series
11
10.5
0.9
2.5
1.1
3.7
4.2
0.2
tD(on)
tr
tD (off)
tf
SD Series Only
VSB = 0V, VIN 0 to 5V, RG = 25Ω
VDD = 5V, RL = 680Ω
0.5
0.6
2
6
211 Series
Min Max
LIMITS
213 Series
Min Max
215 Series
10 10
99
10
9
3.5 3.5
1.5 1.5
5.5 5.5
0.5 0.5
11
11
3.5
1.5
5.5
0.5
1
1
UNIT
mS
pF
ns
Notes:
a. TA = 25°C unless otherwise notes.
b. B is the body (substrate) and V(BR) is breakdown voltage.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 20114 06/19/13 Rev#A8 ECN# SD-SST211/213/215
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