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FQN1N60C PDF даташит

Спецификация FQN1N60C изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel QFET MOSFET».

Детали детали

Номер произв FQN1N60C
Описание N-Channel QFET MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FQN1N60C Даташит, Описание, Даташиты
FQN1N60C
N-Channel QFET® MOSFET
600 V, 0.30 A, 11.5 Ω
Description
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
December 2013
Features
0.30 A, 600 V, RDS(on) = 11.5 (Max.) @ VGS = 10 V, ID = 0.15 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 3.5 pF)
• 100% Avalanche Tested
D
GDS
TO-92
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD Power Dissipation (TA = 25°C)
Power Dissipation (TL = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Symbol
RθJL
RθJA
Parameter
Thermal Resistance, Junction-to-Lead, Max.
Thermal Resistance, Junction-to-Ambient, Max.
(Note 5a)
(Note 5b)
FQN1N60CTA
600
0.3
0.18
1.2
± 30
33
0.3
0.3
4.5
1
3
0.02
-55 to +150
300
FQN1N60CTA
50
140
©2005 Fairchild Semiconductor Corporation
FQN1N60C Rev C1
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
oC/W
www.fairchildsemi.com









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FQN1N60C Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FQN1N60CTA
Top Mark
1N60C
Package
TO-92
Packing Method
AMMO
Reel Size
N/A
Tape Width
N/A
Quantity
2000 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 0.15 A
VDS = 40 V, ID = 0.3 A
2.0
--
--
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
VDD = 300 V, ID = 1.1 A,
RG = 25
VDS = 480 V, ID = 1.1 A,
VGS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
--
0.6
--
--
--
--
--
9.3
0.75
130
19
3.5
7
21
13
27
4.8
0.7
2.7
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 0.3 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 1.1 A,
dIF / dt = 100 A/µs
-- --
-- --
-- --
-- 190
-- 0.53
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 59 mH, IAS = 1.1 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 0.3 A, di/dt 200 A/µs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
5. a) Reference point of the RθJL is the drain lead.
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RθCA is determined by the user’s board design)
Max.
Unit
--
--
50
250
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
11.5
-- S
170 pF
25 pF
6 pF
24 ns
52 ns
36 ns
64 ns
6.2 nC
-- nC
-- nC
0.3 A
1.2 A
1.4 V
-- ns
-- µC
©2005 Fairchild Semiconductor Corporation
FQN1N60C Rev C1
2
www.fairchildsemi.com









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FQN1N60C Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
15V.0GSV
10.0 V
8.0 V
7.0 V
100 6.5 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
10-1
10-2
10-1
Notes :
1. 250µ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
30
25
20
15
10
5
0
0.0
VGS = 10V
VGS = 20V
Note : TJ = 25
0.5 1.0 1.5 2.0
ID, Drain Current [A]
2.5
Figure 5. Capacitance Characteristics
250
200
150
100
50
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
100
150oC
25oC
-55oC
10-1
2
Notes :
1. VDS = 40V
2. 250µ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
100
10-1
0.2
150
25
Notes :
1. V = 0V
GS
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2
V , Source-Drain voltage [V]
SD
1.4
Figure 6. Gate Charge Characteristics
12
10 VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
Note : ID = 1.1A
0
0123456
QG, Total Gate Charge [nC]
©2005 Fairchild Semiconductor Corporation
FQN1N60C Rev C1
3
www.fairchildsemi.com










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Fairchild Semiconductor

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