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FQN1N50C PDF даташит

Спецификация FQN1N50C изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel QFET MOSFET».

Детали детали

Номер произв FQN1N50C
Описание N-Channel QFET MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FQN1N50C Даташит, Описание, Даташиты
FQN1N50C
N-Channel QFET MOSFET
500 V, 0.38 A, 6
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
March 2013
Features
0.38 A, 500 V, RDS(on) = 6 (Max) @VGS = 10 V, ID = 0.19 A
• Low Gate Charge (Typ. 4.9 nC)
• Low Crss (Typ. 4.1 pF)
• 100% Avalanche Tested
D
G
D
S
TO-92
FQN Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)
Power Dissipation (TL = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJL
RθJA
Parameter
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
©2001 Fairchild Semiconductor Corporation
FQN1N50C Rev. C0
1
G
S
FQN1N50C
500
0.38
0.24
3.04
± 30
44.4
0.38
0.21
4.5
0.89
2.08
0.017
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ
--
--
Max
60
140
Unit
°C/W
°C/W
www.fairchildsemi.com









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FQN1N50C Даташит, Описание, Даташиты
Package Marking and Ordering Information
Device Marking
1N50C
Device
FQN1N50C
Package
TO-92
Reel Size
--
Tape Width
--
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 0.19 A
VDS = 40 V, ID = 0.19A
2.0
--
(Note 4)
--
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
VDD = 250 V, ID = 1.0 A,
RG = 25
VDS = 400 V, ID = 1.0 A,
VGS = 10 V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
--
0.5
--
--
--
--
--
4.6
0.6
150
28
4.1
10
10
20
15
4.9
0.66
2.9
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 0.38 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 1.0 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
--
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 80mH, IAS = 1.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 0.38A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
6. a) Reference point of the RθJL is the drain lead
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RθCA is determined by the user’s board design)
--
--
--
188
0.55
Quantity
2000ea
Max.
Unit
--
--
50
250
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
6.0
-- S
195 pF
40 pF
-- pF
30 ns
30 ns
50 ns
40 ns
6.4 nC
-- nC
-- nC
0.38 A
3.04 A
1.4 V
-- ns
-- µC
©2001 Fairchild Semiconductor Corporation
FQN1N50C Rev. C0
2
www.fairchildsemi.com









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FQN1N50C Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
100 7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
Notes :
1. 250µ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
20
15
VGS = 10V
10
VGS = 20V
5
Note : TJ = 25
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
400
300 Coss
Ciss
200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note :
1. VGS = 0 V
2. f = 1 MHz
100 Crss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
100
150oC
25oC
-55oC
10-1
2
Notes :
1. VDS = 40V
2. 250µ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
100
15025
10-1
0.2
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 6. Gate Charge Characteristics
12
10 VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
Note : ID = 1A
0
0123456
QG, Total Gate Charge [nC]
©2001 Fairchild Semiconductor Corporation
FQN1N50C Rev. C0
3
www.fairchildsemi.com










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