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Datasheet 12NK90Z Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 12NK90Z | STW12NK90Z
STW12NK90Z
N-channel 900V - 0.72Ω - 11A - TO-247 Zener-protected SuperMESH™ Power MOSFET
General features
Type STW12NK90Z
VDSS 900V
RDS(on) <0.88Ω
ID pW 11A 230W
■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intr | STMicroelectronics | data |
12N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 12N035 | N-Channel Field Effect Transistor Bay Linear
Inspire the Linear Power
N-Channel Field Effect Transistor
12N035
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other b BL transistor | | |
2 | 12N06Z | 12A 60V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N06Z
12A, 60V N-CHAN NEL POWER MOSFET
DESCRIPTION
1
Power MOSFET
The U TC 12N 06Z is an N-c hannel enh ancement mode Po wer MOSFET using UT C’ s adva nced te chnology to prov ide customers with a mi nimum on-state res istance, h igh s witching sp eed and low g UNISONIC TECHNOLOGIES mosfet | | |
3 | 12N10 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N10
12A, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and le Unisonic Technologies mosfet | | |
4 | 12N10P | N-CHANNEL MOSFET 12N10P
12 Amps,100 Volts N-CHANNEL Power MOSFET
FEATURE
12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
APPLICATION
High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
CHONGQING PINGYANG mosfet | | |
5 | 12N18 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
12N18
·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 180V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.25Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
· Inchange Semiconductor mosfet | | |
6 | 12N20 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
12N20
·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.25Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
· Inchange Semiconductor mosfet | | |
7 | 12N25 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N25
12A, 250V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance a Unisonic Technologies mosfet | |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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