IRGP4760D-EPbF Datasheet PDF - International Rectifier
| Part Number | IRGP4760D-EPbF | |
| Description | Insulated Gate Bipolar Transistor | |
| Manufacturers | International Rectifier | |
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There is a preview and IRGP4760D-EPbF download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
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VCES = 650V
IC = 60A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Lead-Free, RoHs compliant
IRGP4760DPbF
IRGP4760D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
G
E
n-channel
G
Gate
E
GC
IRGP4760DPbF
TO‐247AC
C
Collector
E
GC
IRGP4760D‐EPbF
TO‐247AD
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP4760DPbF
IRGP4760D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4760DPbF
IRGP4760D-EPbF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
90
60
144
192
74
45
±20
325
160
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.46
0.97
–––
–––
Units
°C/W
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June 26, 2014
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12
10
ICE = 24A
8 ICE = 48A
ICE = 96A
6
4
2
0
5 10 15 20
VGE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
10
9
8
7 EON
6
5
4
3
2 EOFF
1
0
0 10 20 30 40 50 60 70 80 90 100 110
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
8
7
6
EON
5
4
3
EOFF
2
1
0
0 20 40 60 80 100 120
RG ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
5 www.irf.com © 2014 International Rectifier
IRGP4760DPbF/IRGP4760D-EPbF
200
TJ = 25°C
150 TJ = 175°C
100
50
0
4 6 8 10 12 14
VGE (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tdOFF
100 tF
tdON
tR
10
0
10 20 30 40 50 60 70 80 90 100
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
10000
1000
100
10
tdOFF
tF
tdON
tR
1
0 20 40 60 80 100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
Submit Datasheet Feedback
June 26, 2014
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRGP4760D-EPbF electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRGP4760D-EPbF.PDF Datasheet ] | |
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