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OM75N05SA PDF даташит

Спецификация OM75N05SA изготовлена ​​​​«Omnirel» и имеет функцию, называемую «POWER MOSFETS».

Детали детали

Номер произв OM75N05SA
Описание POWER MOSFETS
Производители Omnirel
логотип Omnirel логотип 

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OM75N05SA Даташит, Описание, Даташиты
OM55N10SC OM60N10SC OM75N05SC OM75N06SC
OM55N10SA OM75N05SA OM75N06SA
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
50V, 60V, And 100V Ultra Low RDS(on)
Power MOSFETs In TO-254 And TO-258
Isolated Packages
FEATURES
• Isolated Hermetic Metal Packages
• Ultra Low RDS(on)
• Low Conductive Loss/Low Gate Charge
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS (Per Device)
PART NO.
OM60N10SC
OM55N10SC
OM55N10SA
OM75N06SC
OM75N06SA
OM75N05SC
OM75N05SA
VDS (V)
100
100
100
60
60
50
50
RDS(on) ( )
.025
.030
.035
.016
.018
.016
.018
SCHEMATIC
Drain
ID (A)
60
55
55
75
75
75
75
Package
TO-258AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
PIN CONNECTION
TO-254AA
TO-258AA
3.1
Gate
Source
4 11 R1
Supersedes 2 07 R0
3.1 - 47
1
Pin 1:
Pin 2:
Pin 3:
23
Drain
Source
Gate
123
Pin 1: Drain
Pin 2: Source
Pin 3: Gate









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OM75N05SA Даташит, Описание, Даташиты
OM55N10SA - OM75N06SC
3.1
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
60N10SC 55N10SA 75N06SA
55N10SC 75N06SC
VDS
VDGR
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @ TC = 25°C
PD @ TC = 100°C
Junction-To-Case
Drain-Source Voltage
Drain-Gate Voltage (RGS = 1 M )
Continuous Drain Current2
Continuous Drain Current2
Pulsed Drain Current1
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
100 100
60
100 100
60
60 55 75
37 33 45
180 180 225
130 125 125
55 50 50
1.00 1.00 1.00
75N05SA
75N05SC
50
50
75
45
225
125
50
1.00
Units
V
V
A
A
A
W
W
W/°C
TJ Operating and
Tstg Storage Temperature Range
Lead Temperature (1/16" from case for 10 secs.)
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
300 300 300 300 °C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%.
2 Package Limited: SA ID = 25A & SC ID = 35A @ 25°C
THERMAL RESISTANCE
RthJC Junction-to-Case
PACKAGE LIMITATIONS
1.0 °C/W
Parameters
TO254AA TO-258AA Unit
ID Continuous Drain Current
Linear Derating Factor, Junction-to-Ambient
25 35 A
.020 .025 W/°C
RthJA Thermal Resistance, Junction-to-Ambient (Free Air Operation)
50
40 °C/W
MECHANICAL OUTLINE
.165
.155
.695
.685
.270
.240
.045
.035
.144 DIA.
.545
.535
.050
.040
.707
.697
.835
.815
.550
.530
.685
.665
.800
.790
.550
.530
.750
.500
.200 TYP.
.065
.055
.140 TYP.
TO-258AA
.092 MAX.
.005
.045
.035
PACKAGE OPTIONS
.550
.510
.150 TYP.
TO-254AA
.005
.260
.249
.150 TYP.
MOD PAK
Z-TAB
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
3.1 - 48









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OM75N05SA Даташит, Описание, Даташиты
OM60N10SC (TC = 25°C unless otherwise specified)
Avalanche Characteristics
IAR Avalanche Current
Min.
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
IAR Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
IGSS Gate-Body Leakage
Current (VDS = 0)
Electrical Characteristics - ON*
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On
Resistance
ID(on) On State Drain Current
Electrical Characteristics - Dynamic
gfs Forward Transconductance
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Electrical Characteristics - Switching On
Td(on) Turn-On Time
tr Rise Time
(di/dt)on Turn-On Current Slope
100
2
60
25
Qg Total Gate Charge
Electrical Characteristics - Switching Off
Tr(Voff) Off Voltage Rise Time
tf Fall Time
tcross Cross-Over Time
Electrical Characteristics - Source Drain Diode
ISD Source Drain Current
ISDM* Source Drain Current (pulsed)
VSD Forward On Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Typ. Max. Units
60 A
720 mJ
100 mJ
37 A
V
250 µA
1000 µA
±100 nA
4
0.025
0.05
V
A
4000
1100
250
S
pF
pF
pF
90 nS
270 nS
270 A/µS
120 nC
200 nS
210 nS
410 nS
60
240
1.6
180
A
A
V
nS
1.8 µC
10 A
Test Conditions
(repetitive or
non-repetitive,TJ = 25°C)
(starting TJ = 25°C,
ID = IAR, VDD = 25 V)
(pulse width limited
by Tj max, d < 1%)
(repetitive or
non-repetitive, TJ = 100°C)
ID = 250 µA, VGS = 0
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
TC = 100°C
VDS > ID(on) x R ,DS(on)max VGS = 10 V
VDS > ID(on) x R ,DS(on)max ID= 30 A
VDS = 25 V
VGS = 0
f = 1 mHz
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
VDD = 80 V, ID = 30 A, VGS = 10 V
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
ISD = 60 A, VGS = 0
ISD = 60 A, di/dt = 100 A/µs
VR = 80 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM55N10SC (TC = 25°C unless otherwise specified)
Avalanche Characteristics
IAR Avalanche Current
Min.
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
IAR Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
IGSS Gate-Body Leakage
Current (VDS = 0)
Electrical Characteristics - ON*
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On
Resistance
ID(on) On State Drain Current
Electrical Characteristics - Dynamic
gfs Forward Transconductance
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Electrical Characteristics - Switching On
Td(on) Turn-On Time
tr Rise Time
(di/dt)on Turn-On Current Slope
100
2
55
25
Qg Total Gate Charge
Electrical Characteristics - Switching Off
Tr(Voff) Off Voltage Rise Time
tf Fall Time
tcross Cross-Over Time
Electrical Characteristics - Source Drain Diode
ISD Source Drain Current
ISDM* Source Drain Current (pulsed)
VSD Forward On Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Typ. Max. Units
55 A
600 mJ
100 mJ
37 A
V
250 µA
1000 µA
±100 nA
4V
0.03
0.06
A
4000
1100
250
S
pF
pF
pF
90 nS
270 nS
270 A/µS
120 nC
200 nS
210 nS
410 nS
55
220
1.5
180
A
A
V
nS
1.8 µC
11 A
Test Conditions
(repetitive or
non-repetitive,TJ = 25°C)
(starting TJ = 25°C,
ID = IAR, VDD = 25 V)
(pulse width limited
by Tj max, d < 1%)
(repetitive or
non-repetitive, TJ = 100°C)
ID = 250 µA, VGS = 0
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
TC = 100°C
VDS > ID(on) x R ,DS(on)max VGS = 10 V
VDS > ID(on) x R ,DS(on)max ID= 30 A
VDS = 25 V
VGS = 0
f = 1 mHz
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
VDD = 80 V, ID = 30 A, VGS = 10 V
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
ISD = 55 A, VGS = 0
ISD = 55 A, di/dt = 100 A/µs
VR = 80 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.










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