NTBV5605 PDF даташит
Спецификация NTBV5605 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTBV5605 |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
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NTB5605P, NTBV5605
Power MOSFET
-60 V, -18.5 A
P−Channel, D2PAK
Features
• Designed for Low RDS(on)
• Withstands High Energy in Avalanche and Commutation Modes
• AEC Q101 Qualified − NTBV5605
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies
• PWM Motor Control
• Converters
• Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
VDSS
VGS
ID
−60
$20
−18.5
V
V
A
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
88 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A,
L = 3.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IDM
TJ,
TSTG
EAS
−55
−55 to
175
338
A
°C
mJ
TL 260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) – Steady State
RqJC
1.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.41 in2).
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V(BR)DSS
−60 V
RDS(on) TYP
120 mW @ −5.0 V
ID MAX
−18.5 A
P−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
2
1
3
D2PAK
CASE 418B
STYLE 2
NTB5605xG
AYWW
1 23
Gate Drain Source
x = P or blank
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTB5605PT4G
D2PAK 800 / Tape & Reel
(Pb−Free)
NTBV5605T4G
D2PAK 800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 4
1
Publication Order Number:
NTB5605P/D
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NTB5605P, NTBV5605
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(Br)DSS
V(Br)DSS/TJ
VGS = 0 V, ID = −250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V
TJ = 25°C
VDS = −60 V TJ = 125°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
Drain−to−Source On Resistance
VGS(th)
RDS(on)
Forward Transconductance
gFS
Drain−to−Source On Voltage
VDS(on)
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = VDS, ID = −250 mA
VVGGSS
=
=
−5.0
−5.0
V,
V,
IIDD
=
=
−8.5
−17
A
A
VDS = −10 V, ID = −8.5 A
VGS = −5.0 V, ID = −8.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
QG(TOT)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = −25 V
VGS = −5.0 V, VDS = −48 V,
ID = −17 A
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
VGS = −5.0 V, VDD = −30 V,
ID = −17 A, RG = 9.1 W
Forward Diode Voltage
VSD
VGS = 0 V
TJ = 25°C
IS = −17 A
TJ = 125°C
Reverse Recovery Time
trr
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = −17 A
Reverse Recovery Charge
QRR
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
−60
−1.0
Typ Max Unit
V
−64 mV/°C
−1.0
−10
"100
mA
nA
−1.5 −2.0
V
120 140 mW
140
12 S
−1.3
V
730 1190
211 300
67 120
13 22
4.0
7.0
pF
nC
12.5 25
122 183
29 58
75 150
ns
−1.55
−1.4
60
39
21
0.14
−2.5
V
ns
nC
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NTB5605P, NTBV5605
40 VGS = −10 V
35 VGS = −9 V
VGS = −8 V
30 VGS = −7 V
25 TJ = 25°C
VGS = −6 V
VGS = −5.5 V
VGS = −5 V
20 VGS = −4.5 V
15 VGS = −4 V
10
5
VGS = −3.5 V
VGS = −3 V
0
0 1 2 3 4 5 6 7 8 9 10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
40 VDS = −10 V
TJ = −55°C
30 TJ = 25°C
TJ = 125°C
20
10
0
0123 4567 89
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.5
0.45
VGS = −5.0 V
0.4
0.35
0.3
0.25 TJ = 125°C
0.2
0.15
TJ = 25°C
0.1
0.05
00
TJ = −55°C
5 10 15 20 25 30
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
0.25
0.225
TJ = 25°C
0.2
0.175
0.15
0.125
VGS = −5.0 V
0.1
0.075
VGS = −10 V
0.05
0.025
0 0 3 6 9 12 15 18 21 24
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
1.8
ID = −8.5 A
VGS = −5.0 V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10000
VGS = 0 V
1000
100
TJ = 150°C
TJ = 125°C
10
1
150 5 10 15 20 25 30 35 40 45 50 55 60
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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