NTE2527 PDF даташит
Спецификация NTE2527 изготовлена «NTE» и имеет функцию, называемую «Silicon Complementary Transistors». |
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Детали детали
Номер произв | NTE2527 |
Описание | Silicon Complementary Transistors |
Производители | NTE |
логотип |
2 Pages
No Preview Available ! |
NTE2526 (NPN) & NTE2527 (PNP)
Silicon Complementary Transistors
High Current Switch
TO251
Features:
D Low Collector−Emitter Saturation Voltage
D High Current and High fT
D Excellent Linearity of hFE
D Fast Switching Time
D TO251 Type Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current,
Continuous
IC. .
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4A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector
TTAC
P=o+w2e5r°CDis.s.i.p.a.ti.o.n.,.P. C. .
= +25°C . . . . . . . . . . . .
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1W
20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain−Bandwidth Product
NTE2526
NTE2527
ICBO
IEBO
hFE
fT
VCB = 100V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 500mA
VCE = 5V, IC = 3A
VCE = 10V, IC = 500mA
Output Capacitance
NTE2527
Cob VCB = 10V, f = 1MHz
NTE2526
Min Typ Max Unit
− − 1.0 μA
− − 1.0 μA
140 − 400
40 − −
− 180 − MHz
− 130 − MHz
− 40 − pF
− 65 − pF
Rev. 8−10
No Preview Available ! |
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector−Emitter Saturation Voltage
NTE2526
VCE(sat) IC = 2A, IB = 200mA
− 150 400 mV
NTE2527
− 200 500 mV
Base−Emitter Saturation Voltage
VBE(sat) IC = 2A, IB = 200mA
− 0.9 1.2 V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10μA, IE = 0
120 −
−V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
100 −
−V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10μA, IC = 0
6 − −V
Turn−On Time
Storage Time
NTE2526
ton
tstg
VP10CuIlCBs1e==W5−0i1dV0t,hIBV=2B=E20=ICμ−s=5,2VA,,
Duty Cycle ≤ 1%, Note 1
− 100 − ns
− 900 − ns
NTE2527
− 800 − ns
Fall Time
tf
50 ns
Note 1. For NTE2527, the polarity is reversed.
.059 (1.5)
.256 (6.5)
.197 (5.0)
C
BC E
.090 (2.3)
.275
(7.0)
.295
(7.5)
.090 (2.3)
.002 (0.5)
.002(0.5)
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