WTBV118DI PDF даташит
Спецификация WTBV118DI изготовлена «Winsem Technology» и имеет функцию, называемую «POWER TRANSISTOR». |
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Детали детали
Номер произв | WTBV118DI |
Описание | POWER TRANSISTOR |
Производители | Winsem Technology |
логотип |
4 Pages
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Winsem Technology Corp.
High Voltage NPN Power Transistor with Diode
Features
• High Voltage
• BVCEO : 400V
• BVCBO : 800V
• IC : 1.5A
• Silicon Triple Diffused Type
• NPN Silicon Transistor with Diode
• Free-wheeling Diode Inside
• Low Variable Storage-time Spread
• Low Base Drive Requirement
• Half Bridge Light Ballast Application
Application
• Electronic Ballasts
• Adapter
• Lighting
WTBV118DI
POWER TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collect Current
Collector Peak Current (tp <5ms)
Base Current
Base Peak Current (tp <5ms)
Total Power Dissipation @ Tc ≦ 25℃ (TO-251)
Maximum Operating Junction Temperature
Storage Temperature Range
Version A10
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
TJ
TSTG
Max rating
800
400
10
1.5
3
1
2
30
+150
-65 ~ +150
Unit
V
V
V
A
A
A
A
W
℃
℃
Page 1
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Winsem Technology Corp.
WTBV118DI
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
Parameter
Symbol
Test Condition
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
BVCBO
BVCEO
IC = 1mA, IB=0
IC = 10mA, IE=0
Emitter- Base Breakdown Voltage
BVEBO IE = 1mA, IC=0
Collector Cutoff Current
ICBO VCB = 700V, IE=0
Emitter Cutoff Current
IEBO VEB = 9V, IC=0
hFE1 VCE = 5V, IC=10mA
DC Current Gain
hFE2 VCE = 5V, IC=400mA
hFE3 VCE = 5V, IC=1A
VCE(SAT1) IC = 0.5A, IB =0.1A
Collector-Emitter Saturation Voltage
VCE(SAT2) IC = 1A, IB =0.25A
Base-Emitter Saturation Voltage
VBE(SAT1) IC = 0.5A, IB =0.1A
VBE(SAT2) IC = 1A, IB =0.25A
Min Typ Max Unit
800 ─
─
V
400 ─
─
V
10 ─
─
V
──
1㎂
──
1㎂
10 ─
─
10 ─
30
5─
─
─ ─ 0.5
─ 1.1 1.5
V
─ ─ 1.1 V
─ ─ 1.2 V
Resistive Load Switching Time (Ratings)
Turn On Time
Storage Time
Fall Time
ton
tSTG
tf
Vcc=250V, IC=1A,
IB1=0.2A, IB2 = 0.2A,
tp = 25uS
Duty Cycle < 1%
─
─
─
0.15
0.5
0.3
0.9
0.2 0.4
uS
uS
uS
Diode
Parameter
Symbol
Fall Time
Forward Voltage Drop
tF
Vf
Note: Pulse Duration = 300uS, duty cycle ≦ 2%
Test Condition
Ic=1A
Ic=1A
Min Typ Max Unit
─ ─ 800 uS
─ ─ 1.4 V
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
Symbol
RӨ JC
RӨ JA
Limit
6.25
100
Unit
oC/W
oC/W
Version A10
Page 2
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Winsem Technology Corp.
Electrical Characteristic Curves
Static Characteristics
WTBV118DI
POWER TRANSISTOR
DC Current Gain
Vce(sat) v.s Vbe(sat)
Power Derating
Reverse Bias SOA
Safety Operating Area
Version A10
Page 3
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Номер в каталоге | Описание | Производители |
WTBV118DI | POWER TRANSISTOR | Winsem Technology |
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