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WTBV118DI PDF даташит

Спецификация WTBV118DI изготовлена ​​​​«Winsem Technology» и имеет функцию, называемую «POWER TRANSISTOR».

Детали детали

Номер произв WTBV118DI
Описание POWER TRANSISTOR
Производители Winsem Technology
логотип Winsem Technology логотип 

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WTBV118DI Даташит, Описание, Даташиты
Winsem Technology Corp.
High Voltage NPN Power Transistor with Diode
Features
• High Voltage
• BVCEO : 400V
• BVCBO : 800V
• IC : 1.5A
• Silicon Triple Diffused Type
• NPN Silicon Transistor with Diode
• Free-wheeling Diode Inside
• Low Variable Storage-time Spread
• Low Base Drive Requirement
• Half Bridge Light Ballast Application
Application
• Electronic Ballasts
• Adapter
• Lighting
WTBV118DI
POWER TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collect Current
Collector Peak Current (tp <5ms)
Base Current
Base Peak Current (tp <5ms)
Total Power Dissipation @ Tc ≦ 25℃ (TO-251)
Maximum Operating Junction Temperature
Storage Temperature Range
Version A10
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
TJ
TSTG
Max rating
800
400
10
1.5
3
1
2
30
+150
-65 ~ +150
Unit
V
V
V
A
A
A
A
W
Page 1









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WTBV118DI Даташит, Описание, Даташиты
Winsem Technology Corp.
WTBV118DI
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
Parameter
Symbol
Test Condition
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
BVCBO
BVCEO
IC = 1mA, IB=0
IC = 10mA, IE=0
Emitter- Base Breakdown Voltage
BVEBO IE = 1mA, IC=0
Collector Cutoff Current
ICBO VCB = 700V, IE=0
Emitter Cutoff Current
IEBO VEB = 9V, IC=0
hFE1 VCE = 5V, IC=10mA
DC Current Gain
hFE2 VCE = 5V, IC=400mA
hFE3 VCE = 5V, IC=1A
VCE(SAT1) IC = 0.5A, IB =0.1A
Collector-Emitter Saturation Voltage
VCE(SAT2) IC = 1A, IB =0.25A
Base-Emitter Saturation Voltage
VBE(SAT1) IC = 0.5A, IB =0.1A
VBE(SAT2) IC = 1A, IB =0.25A
Min Typ Max Unit
800 ─
V
400 ─
V
10 ─
V
──
1㎂
──
1㎂
10 ─
10 ─
30
5─
─ ─ 0.5
─ 1.1 1.5
V
─ ─ 1.1 V
─ ─ 1.2 V
Resistive Load Switching Time (Ratings)
Turn On Time
Storage Time
Fall Time
ton
tSTG
tf
Vcc=250V, IC=1A,
IB1=0.2A, IB2 = 0.2A,
tp = 25uS
Duty Cycle < 1%
0.15
0.5
0.3
0.9
0.2 0.4
uS
uS
uS
Diode
Parameter
Symbol
Fall Time
Forward Voltage Drop
tF
Vf
Note: Pulse Duration = 300uS, duty cycle ≦ 2%
Test Condition
Ic=1A
Ic=1A
Min Typ Max Unit
─ ─ 800 uS
─ ─ 1.4 V
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
Symbol
JC
JA
Limit
6.25
100
Unit
oC/W
oC/W
Version A10
Page 2









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WTBV118DI Даташит, Описание, Даташиты
Winsem Technology Corp.
Electrical Characteristic Curves
Static Characteristics
WTBV118DI
POWER TRANSISTOR
DC Current Gain
Vce(sat) v.s Vbe(sat)
Power Derating
Reverse Bias SOA
Safety Operating Area
Version A10
Page 3










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