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PDF HM621664HB Data sheet ( Hoja de datos )
| Número de pieza | HM621664HB | |
| Descripción | 1M High Speed SRAM | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HM621664HB Series
1 M High Speed SRAM (64-kword × 16-bit)
ADE-203-349B(Z)
Rev. 2.0
Nov. 1997
Description
The HM621664HB is an asynchronous high speed static RAM organized as 64-kword × 16-bit. It realize
high speed access time (15/20 ns) with employing 0.8 µm CMOS process and high speed circuit designing
technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. The HM621664HB is packaged
in 400-mil 44-pin SOJ for high density surface mounting.
Features
• Single 5 V supply
• Access time: 15/20 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• 400-mil 44-pin SOJ package
• Center VCC and VSS type pinout
Ordering Information
Type No.
HM621664HBJP-15
HM621664HBJP-20
HM621664HBLJP-15
HM621664HBLJP-20
Access time
15 ns
20 ns
15 ns
20 ns
Package
400-mil 44-pin plastic SOJ (CP-44D)
1 page  
HM621664HB Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)
Parameter
Symbol Min
Typ*1 Max Unit Test conditions
Input leakage current
Output leakage
current*1
|ILI| — — 2
|ILO| — — 2
µA Vin = VSS to VCC
µA Vin = VSS to VCC
Operating power
supply current
15 ns cycle ICC
Standby power supply
current
20 ns cycle ICC
15 ns cycle ISB
20 ns cycle ISB
I SB1
— 160 180 mA CS = VIL, Iout = 0 mA
Other inputs = VIH/VIL
— 130 150
— 55 100 mA CS = VIH,
Other inputs = VIH/VIL
— 45 80
——2
mA VCC ≥ CS ≥ VCC – 0.2 V,
(1) 0 V ≤ Vin ≤ 0.2 V or
(2) VCC ≥ Vin ≥ VCC – 0.2 V
—*2
—*2
0.2*2
Output voltage
VOL — — 0.4 V
VOH 2.4 — — V
Note: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and specified loading.
2. This characteristics is guaranteed only for L-version.
IOL = 8 mA
IOH = –4 mA
Capacitance (Ta = 25°C, f = 1.0 MHz)
Parameter
Symbol Min Typ
Input capacitance*1
Cin — —
Input/output capacitance*1
CI/O
——
Note: 1. This parameter is sampled and not 100% tested.
Max Unit
6 pF
8 pF
Test conditions
Vin = 0 V
VI/O = 0 V
5
5 Page 
Write Timing Waveform (2) (WE Controlled)
Address
WE*3
CS*3
tWC
Valid address
tAW
tAS
tWP
tCW
HM621664HB Series
tWR
OE
LB, UB
Dout
(Lower/Upper
byte)
Din
(Lower/Upper
byte)
tLBW
tUBW
tWHZ
tOHZ
*2
tOLZ
tOW
High impedance
tDW tDH
Valid data
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet HM621664HB.PDF ] | |
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