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PDF HFF7N60 Data sheet ( Hoja de datos )
| Número de pieza | HFF7N60 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | HUASHAN ELECTRONIC | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co., Ltd.
HFF7N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
█ Features
• 7A, 600V(See Note), RDS(on) <1.2Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
TO-220F
1
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------600V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)------------------------------------------------------------ 7A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 28A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 48W
Derate Above 25℃ ------------------------------------------------------------------------- 0.38W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 420mJ
IAR—— Avalanche Current (Note 1) ------------------------------------------------------------------------- 7A
EAR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------- 4.8mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------5.5V/ns
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
Max 2.6
Max 62.5
Unit
℃/W
℃/W
1 page  
Shantou Huashan Electronic Devices Co., Ltd.
█ Typical Characteristics
HFF7N60
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HFF7N60.PDF ] | |
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