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Datasheet HFF640 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HFF640 | N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF640
APPLICATIONSL
High Voltage High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VDGR
Drain-Gate Vol |  HUASHAN ELECTRONIC | mosfet |
HFF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HFF11N60S | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co., Ltd.
HFF11N60S
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especiall HUASHAN ELECTRONIC transistor | | |
| 2 | HFF2N60 | N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60
APPLICATIONSL
High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain HUASHAN ELECTRONIC mosfet | | |
| 3 | HFF5N60 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd.
HFF5N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially t HUASHAN ELECTRONIC transistor | | |
| 4 | HFF630 | N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF630
APPLICATIONSL
High Voltage High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VDGR
Drain-Gate Vol HUASHAN ELECTRONIC mosfet | | |
| 5 | HFF640 | N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF640
APPLICATIONSL
High Voltage High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VDGR
Drain-Gate Vol HUASHAN ELECTRONIC mosfet | | |
| 6 | HFF7N60 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co., Ltd.
HFF7N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially HUASHAN ELECTRONIC transistor | |
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