C5612 PDF даташит
Спецификация C5612 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC5612». |
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Детали детали
Номер произв | C5612 |
Описание | NPN Transistor - 2SC5612 |
Производители | Toshiba Semiconductor |
логотип |
5 Pages
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2SC5612
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5612
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
l High Voltage
l Low Saturation Voltage
l High Speed
: VCBO = 2000 V
: VCE (sat) = 3 V (Max.)
: tf = 0.15µs (Typ.)
Unit: mm
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
2000
900
5
22
44
11
220
150
−55~150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut−off Current
Emitter Cut−off Current
Collector−Emitter Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Switching Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg
tf
VCB = 2000 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 9 A
VCE = 5 V, IC = 17 A
IC = 17 A, IB = 4.25 A
IC = 17 A, IB = 4.25 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 8 A, IB1 (end) = 1A
fH = 32 kHz
JEDEC
―
JEITA
―
TOSHIBA
2-21F2A
Weight: 9.75 g (typ.)
MIN TYP. MAX UNIT
――
1 mA
― ― 100 µA
900 ― ― V
15 ― 50
9.5 ― 18.5 ―
4.8 ― 9.0
―― 3 V
― ― 1.3 V
― 2 ― MHz
― 470 ―
pF
― 4.0 5.0
µs
― 0.15 0.35
1 2001-08-20
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2SC5612
2 2001-08-20
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2SC5612
3 2001-08-20
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DataSheet26.com | 2020 | Контакты | Поиск |