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C5197 PDF даташит

Спецификация C5197 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC5197».

Детали детали

Номер произв C5197
Описание NPN Transistor - 2SC5197
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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C5197 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5197
Power Amplifier Applications
2SC5197
Unit: mm
Complementary to 2SA1940
Suitable for use in 55-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
120
120
5
8
0.8
80
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 120 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
hFE (2)
VCE = 5 V, IC = 4 A
VCE (sat) IC = 6 A, IB = 0.6 A
VBE VCE = 5 V, IC = 4 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
JEDEC
JEITA
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
Min Typ. Max Unit
― ― 5.0 µA
― ― 5.0 µA
120
V
55 160
35 75
0.35 2.0
V
0.95 1.5
V
30 MHz
120
pF
1 2004-07-07









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C5197 Даташит, Описание, Даташиты
Marking
TOSHIBA
C5197
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SC5197
2 2004-07-07









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C5197 Даташит, Описание, Даташиты
10
300
8
6
IC – VCE
250 200
150
Common emitter
Tc = 25°C
100
50
4 40
30
2 20
IB = 10 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
2SC5197
IC – VBE
10
8
6 Tc = 100°C
25°C
4 25°C
2
Common emitter
VCE = 5 V
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE (sat) – IC
10
1000
hFE – IC
1
0.1
Tc = 25°C
Tc = 100°C
0.01
0.01
Tc = 25°C
0.1
1
Common emitter
IC/IB = 10
10 100
Collector current IC (A)
Safe Operating Area
30
IC max (pulsed)*
10 IC max (continuous)
1 ms*
10 ms*
5
DC operation
3 Tc = 25°C
100 ms*
1
0.5
0.3
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
0.1 linearly with increase in
temperature.
VCEO max
0.05
23
10 30 100
Collector-emitter voltage VCE (V)
300
Tc = 100°C
100
Tc = 25°C
Tc = 25°C
10
1
0.01
0.1
Common emitter
VCE = 5 V
1 10
Collector current IC (A)
3 2004-07-07










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