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Número de pieza | ADA-4789 | |
Descripción | Silicon Bipolar Darlington Amplifier | |
Fabricantes | AVAGO | |
Logotipo | ||
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No Preview Available ! ADA-4789
Silicon Bipolar Darlington Amplifier
Data Sheet
Description
Avago Technologies’ ADA-4789 is an economical, easy-
to-use, general purpose silicon bipolar RFIC gain block
amplifiers housed in SOT-89 surface mount plastic
package.
The Darlington feedback structure provides inherent
broad bandwidth performance, resulting in useful
operating frequency up to 2.5 GHz. This is an ideal
device for small-signal gain cascades or IF amplification.
ADA-4789 is fabricated using Avago’s HP25 silicon
bipolar process, which employs a double-diffused
single poly-silicon process with self-aligned submicron
emitter geometry. The process is capable of
simultaneous high fT and high NPN breakdown (25 GHz
fT at 6V BVCEO). The process utilizes industry standard
device oxide isolation technologies and submicron
aluminum multi-layer inter-connects to achieve
superior performance, high uniformity, and proven
reliability.
Package Marking and Pin Connections
Note: Package marking provides orientation and identification
“4G” = Device Code
“x” = Month code indicates the month of manufacture
Features
• Small Signal Gain Amplifier
• Operating Frequency: DC – 2.5 GHz
• Unconditionally Stable
• 50 Ohms Input & Output
• Flat, Broadband Frequency Response up to 1 GHz
• Operating Current: 40 – 80 mA
• Industry Standard SOT-89 Package
• Single Supply
• VSWR < 2 Throughput Operating Frequency
Specifications
900MHz, 3.80V, 60mA (Typical)
• 16.50 dB Associated Gain
• 17.10 dBm P1dB
• 32.60 dBm OIP3
• 4.20 dB Noise Figure
900MHz, 4.10V, 80mA (Typical)
• 16.90 dB Associated Gain
• 18.80 dBm P1dB
• 33.20 dBm OIP3
• 4.30 dB Noise Figure
Applications
• Cellular/PCS/WLL Base Stations
• Wireless Data/WLAN
• Fiber-Optic Systems
• ISM
1 page 35
30
25
20
15
10
012 3456
Frequency (GHz)
Figure 7. OIP3 vs Frequency at Id = 60 mA.
90
80 -40C
25C
70 85C
60
50
40
30
20
10
0
0 1 23 4 5
Vd (V)
Figure 9. Id vs. Vd and Temperature.
6
5
4
3
2
01 234 56
Frequency (GHz)
Figure 8. NF vs Frequency at Id = 60 mA.
17.0
16.5
16.0
15.5
15.0
14.5
-40C
25C
85C
14.0
0
20 40 60 80 100
Id (mA)
Figure 10. Gain vs. Id and Temperature at 900 MHz.
20
18
16
14
12
10
8
6
4 -40C
25C
2 85C
0
0 0.02 0.04 0.06 0.08
Id (mA)
Figure 11. P1dB vs. Id and Temperature at 900 MHz.
0.1
40
35
30
25
20
15
10
5
0
0
-40C
25C
85C
20 40 60 80 100
Id (mA)
Figure 12. OIP3 vs. Id and Temperature at 900 MHz.
5
5 Page Part Number Ordering Information
Part Number
No of Devices Container
ADA-4789-TR1G
ADA-4789-BLKG
3000
100
13" Reel
Anti-Static Bag
SOT 89 Package Dimensions
Notes:
1. Dimensioning and tolerancing per
ANSI.Y14.5M-1982
2. Controlling dimension: Milimeter
convert to Inch are not necessary exact.
3. Dimension B1, 2 places.
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet ADA-4789.PDF ] |
Número de pieza | Descripción | Fabricantes |
ADA-4789 | Silicon Bipolar Darlington Amplifier | AVAGO |
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