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PDF HCPL-817 Data sheet ( Hoja de datos )
| Número de pieza | HCPL-817 | |
| Descripción | Phototransistor Optocoupler High Density Mounting Type | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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HCPL-817
Phototransistor Optocoupler High Density Mounting Type
Data Sheet
Lead (Pb) Free
RoHS 6 fully
compliant
RoHS 6 fully compliant options available;
-xxxE denotes a lead-free product
Description
The HCPL-817 contains a light emitting diode optically
coupled to a phototransistor. It is packaged in a 4-pin DIP
package and available in wide-lead spacing option and
lead bend SMD option. Input-output isolation voltage is
5000 Vrms. Response time, tr, is typically 4 μs and minimum
CTR is 50% at input current of 5 mA.
Schematic
1
ANODE +
VF
IF
–
CATHODE
2
IC 4
COLLECTOR
3
EMITTER
Functional Diagram
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
43
Features
• Current Transfer Ratio
(CTR: min. 50% at IF = 5 mA, VCE = 5 V)
• High input-output isolation voltage (Viso = 5000 Vrms)
• Response time
(tr: typ., 4 μs at VCE = 2 V, IC = 2 mA, RL = 100 Ω)
• Compact dual-in-line package
• UL approved
• CSA approved
• IEC/EN/DIN EN 60747-5-2 approved
• Options available:
– Leads with 0.4" (10.16 mm) spacing (W00)
– Leads bends for surface mounting (300)
– Tape and reel for SMD (500)
– IEC/EN/DIN EN 60747-5-2 approvals (060)
Applications
• Signal transmission between circuits of different
potentials and impedances
• I/O interfaces for computers
• Feedback circuit in power supply
1
1. ANODE
2. CATHODE
2
3. EMITTER
4. COLLECTOR
CAUTION: It is advised that normal static precautions be taken in handling and assembly
of this component to prevent damage and/or degradation which may be induced by ESD.
1 page  
Electrical Specifications (TA = 25°C)
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
*Current Transfer Ratio
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
Cut-off Frequency
Symbol
VF
IR
Ct
ICEO
BVCEO
BVECO
IC
CTR
VCE(sat)
tr
tf
fc
Isolation Resistance
Riso
Floating Capacitance
* CTR = IC x 100%
IF
60
Cf
50
40
30
20
10
0
-30 0 25 50 75 100
TA – AMBIENT TEMPERATURE – °C
Figure 1. Forward current vs. temperature.
Min. Typ. Max.
– 1.2 1.4
– – 10
– 30 250
– – 100
70 –
–
6––
2.5 –
30
50 –
600
– 0.1 0.2
– 4 18
– 3 18
– 80 –
5 x 1010 1 x 1011 –
– 0.6 1.0
Units
V
μA
pF
nA
V
V
mA
%
V
μs
μs
KHz
Ω
pF
Test Conditions
IF = 20 mA
VR = 4 V
V = 0, f = 1 KHz
VCE = 20 V
IC = 0.1 mA
IE = 10 μA
IF = 5 mA, VCE = 5 V,
RBE = ∞
IF = 20 mA, IC = 1 mA
VCE = 2 V, IC = 2 mA
RL = 100 Ω
VCC = 5 V, IC = 2 mA
RL = 100 Ω, –3 dB
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
200
150
100
50
0
125 -30 0 25 50 75 100 125
TA – AMBIENT TEMPERATURE – °C
Figure 2. Collector power dissipation vs. temperature.
6
TA = 25°C
5 IC = 0.5 mA
4 IC = 1 mA
IC = 3 mA
3 IC = 5 mA
2 IC = 7 mA
1
0
0 5 10
IF – FORWARD CURRENT – mA
Figure 3. Collector-emitter saturation voltage vs. forward current.
5
15
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HCPL-817.PDF ] | |
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