DataSheet.es    


PDF GT40Q321 Data sheet ( Hoja de datos )

Número de pieza GT40Q321
Descripción Voltage Resonance Inverter Switching Application
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de GT40Q321 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! GT40Q321 Hoja de datos, Descripción, Manual

GT40Q321
TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT
GT40Q321
Voltage Resonance Inverter Switching Application
· The 5th generation
· Enhancement-mode
· High speed : tf = 0.41 µs (typ.) (IC = 40A)
· Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)
· FRD included between emitter and collector
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
@ Tc = 100°C
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
Rating
1200
±25
23
42
80
10
80
68
170
150
55 to 150
Unit
V
V
A
A
A
W
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
0.74
1.79
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Gate
Emitter
1 2003-02-05

1 page




GT40Q321 pdf
ICmax – Tc
50
Common emitter
VGE = 15 V
40
30
20
10
0
25 50 75 100 125 150
Case temperature Tc (°C)
GT40Q321
rth (t) – tw
Tc = 25°C
102
101
Diode stage
100
10-1
IGBT stage
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
102
Pulse width tw (s)
80 Common collector
VGE = 0
IF – VF
-40
60
25
Tc = 125°C
40
20
10
0 1 23
4
Forward voltage VF (V)
trr, Irr – IF
0.8 8
0.6
trr
0.4 Irr
6
4
0.2 2
Common collector
di/dt = -20 A/ms
Tc = 25°C
00
0 10 20 30 40 50
Forward current IF (A)
trr, Irr – di/dt
1.0
Common collector
IF = 10 A
Tc = 25°C
0.8
20
16
0.6 trr
0.4
12
8
0.2 Irr
4
0.0 0
0 50 100 150 200 250
di/dt (A/ms)
5
2003-02-05

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet GT40Q321.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
GT40Q321Voltage Resonance Inverter Switching ApplicationToshiba Semiconductor
Toshiba Semiconductor
GT40Q322Voltage Resonance Inverter Switching ApplicationToshiba Semiconductor
Toshiba Semiconductor
GT40Q323Silicon N Channel IGBT / Voltage Resonance Inverter Switching ApplicationToshiba Semiconductor
Toshiba Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar