DataSheet26.com

AMMP-6421 PDF даташит

Спецификация AMMP-6421 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «13-16 GHz 1W Power Amplifier».

Детали детали

Номер произв AMMP-6421
Описание 13-16 GHz 1W Power Amplifier
Производители AVAGO
логотип AVAGO логотип 

10 Pages
scroll

No Preview Available !

AMMP-6421 Даташит, Описание, Даташиты
AMMP-6421
13-16 GHz 1W Power Amplifier in SMT Package
Data Sheet
Description
The AMMP-6421 MMIC is a 1W power amplifier in a
surface mount package designed for use in transmit-
ters that operate at frequencies between 13GHz and
16GHz. Between 13GHz and 16GHz, it provides 29 dBm
of output power (P-1dB) and 26dB of small-signal gain.
This power amplifier is optimized for linear operation with
an output third order intercept point (OIP3) of +36dBm.
The AMMC-6421 is manufactured with Avago’s unique
enhancement mode 0.25m GaAs PHEMT process
that eliminates the need for negative DC biasing.
Package Diagram
Vg Vd1 Vd2
1 23
RF IN 8
4 RF OUT
Features
5x5mm SMT package
One-watt saturated output power
50 match on input and output
Typical Specifications (Vd=5V, Idsq=0.6A)
Frequency range 13 to 16 GHz
Small signal Gain of 26dB
Output power @P-1 of 29dBm (Typ.)
Input/Output return-loss of -6dB/-8dB
Applications
Microwave Radio systems
Satellite VSAT, Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access (including 802.16 and
802.20 WiMax)
WLL and MMDS loops
Functional Block Diagram
765
Vg Vd1 Vd2
123
8
7 65
Pin Function
1 Vg
2 Vd1
3 Vd2
4 RF_OUT
4
5 Vd2
6 Vd1
7 Vg
8 RF_IN
RoHS-Exemption
Please refer to hazardous substances table on page 10.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A) = 50 V
ESD Human Body Model (Class 0) = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note: MSL Rating = Level 2A









No Preview Available !

AMMP-6421 Даташит, Описание, Даташиты
Electrical Specifications
1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
2. Pre-assembly into package performance verified 100% on wafer.
3. This final package part performance is verified by a functional test correlated to actual performance at one or more
frequencies.
4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may
be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)
matching.
5. The Gain at P1dB tested at 13, 14.5 and 16 GHz guaranteed with measurement accuracy +/-1dB for Gain, +/-1.2dB for
P1dB at 13 GHz and +/-1.5dB for P1dB at 14.5 GHz and 16 GHz.
6. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies.
Table 1. RF Electrical Characteristics
TA=25°C, Vd=5.0V, Idq=0.6mA, Vg= +0.5V, Zo=50 Ω
Parameter
Small Signal Gain, Gain
Output Power at 1dBGain Compression, P1dB
Output Power at 3dBGain Compression, P3dB
Output Third Order Intercept Point, OIP3;
Point Δf= 2 MHz; Pout = +10 dBm, SCL
Min Reverse Isolation, Isolation
Input Return Loss, Rlin
Output Return Loss, RLout
13GHz
14.5GHz
16GHz
Min Typ Max Min Typ Max Min Typ Max Unit Comment
24 26 30 22 26 28 24 26 30 dB
27 29
26 29
25 29
dBm
30 30 30 dBm
36 36 36 dBm
45 45 45 dB
6 6 6 dB
8 8 8 dB
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description
Min. Typical Max. Unit Comments
Drain Supply Current, Id
600
mA Vd = 5V, Vg set for typical Id(q) Typical
Gate Supply Voltage, Vg
0.5
V Id(q) = 600mA
2









No Preview Available !

AMMP-6421 Даташит, Описание, Даташиты
Table 3. Thermal Properties
Parameter
Test Conditions
Value
Thermal Resistance (channel to backside), jc
Ambient operational temperature TA = 25°C
jc = 17 °C/W
Channel Temperature, Tch
Tch = 136 °C
Note:
1. Assume SnPb soldering to an evaluation RF board at 85°C base plate temperatures. Worst case for the channel temperature is under the quiescent
operation. At saturated output power, DC power consumption rises to 5 W with 1.43 W RF power delivered to load. Power dissipation is 3.57 W and
the temperature rise in the channel is 33.6°C. In this condition, the base plate temperature must be remained below 94.3°C to maintain maximum
operating channel temperature below 155°C.
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description
Drain Supply Voltage, Vd
Gate Supply Voltage, Vg
Power Dissipation, Pd [2,3]
RF CW Input Power, Pin [2]
Channel Temperature, Tch, max [4,5]
Storage Case Temperature, Tstg
Maximum Assembly Temperature, Tmax
Min.
-65
Max.
6
1
8
23
+150
+150
260
Unit Comments
V
V
W
dBm CW
°C
°C
°C 30 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operate at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET
5. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
3










Скачать PDF:

[ AMMP-6421.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
AMMP-64206-18 GHz 1W Power AmplifierAgilent Technologies
Agilent Technologies
AMMP-642113-16 GHz 1W Power AmplifierAVAGO
AVAGO
AMMP-642518-28 GHz 1W Power AmplifierAVAGO TECHNOLOGIES
AVAGO TECHNOLOGIES

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск